FR2312112A1 - Procede et appareil pour le dopage de corps semi-conducteurs par une methode de fusion de zone a gradient de temperature - Google Patents
Procede et appareil pour le dopage de corps semi-conducteurs par une methode de fusion de zone a gradient de temperatureInfo
- Publication number
- FR2312112A1 FR2312112A1 FR7615029A FR7615029A FR2312112A1 FR 2312112 A1 FR2312112 A1 FR 2312112A1 FR 7615029 A FR7615029 A FR 7615029A FR 7615029 A FR7615029 A FR 7615029A FR 2312112 A1 FR2312112 A1 FR 2312112A1
- Authority
- FR
- France
- Prior art keywords
- temperature gradient
- semiconductor bodies
- doping semiconductor
- gradient zone
- zone fusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title 1
- 238000007500 overflow downdraw method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/578,736 US4041278A (en) | 1975-05-19 | 1975-05-19 | Heating apparatus for temperature gradient zone melting |
US05/578,807 US4001047A (en) | 1975-05-19 | 1975-05-19 | Temperature gradient zone melting utilizing infrared radiation |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2312112A1 true FR2312112A1 (fr) | 1976-12-17 |
Family
ID=27077566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7615029A Withdrawn FR2312112A1 (fr) | 1975-05-19 | 1976-05-19 | Procede et appareil pour le dopage de corps semi-conducteurs par une methode de fusion de zone a gradient de temperature |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS51140803A (nl) |
DE (1) | DE2621418C2 (nl) |
FR (1) | FR2312112A1 (nl) |
GB (1) | GB1545113A (nl) |
NL (1) | NL7605260A (nl) |
SE (1) | SE416597B (nl) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0032920A1 (en) * | 1979-07-31 | 1981-08-05 | Western Electric Co | ZONE MELTING METHOD WITH PHOTO-INDUCED TEMPARATURE RADIENT. |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2638270C2 (de) * | 1976-08-25 | 1983-01-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium |
JPS5939711A (ja) * | 1982-08-26 | 1984-03-05 | Ushio Inc | ウエハ−上のアモルファスシリコンもしくは多結晶シリコンをエピタキシアル成長させる方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2450901A1 (de) * | 1973-10-30 | 1975-05-07 | Gen Electric | Halbleitervorrichtung mit ein grosses seitenverhaeltnis aufweisenden pn-uebergaengen und verfahren zur herstellung |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2054828B2 (de) * | 1970-11-07 | 1974-06-27 | Applied Materials Technology, Inc. Santa Clara, Calif. (V.St.A.) | Vorrichtung und Verfahren zur Bedampfung von Substraten |
US3904442A (en) * | 1973-10-30 | 1975-09-09 | Gen Electric | Method of making isolation grids in bodies of semiconductor material |
-
1976
- 1976-05-14 DE DE2621418A patent/DE2621418C2/de not_active Expired
- 1976-05-17 NL NL7605260A patent/NL7605260A/nl not_active Application Discontinuation
- 1976-05-18 GB GB20471/76A patent/GB1545113A/en not_active Expired
- 1976-05-19 SE SE7605678A patent/SE416597B/xx unknown
- 1976-05-19 FR FR7615029A patent/FR2312112A1/fr not_active Withdrawn
- 1976-05-19 JP JP51056778A patent/JPS51140803A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2450901A1 (de) * | 1973-10-30 | 1975-05-07 | Gen Electric | Halbleitervorrichtung mit ein grosses seitenverhaeltnis aufweisenden pn-uebergaengen und verfahren zur herstellung |
Non-Patent Citations (2)
Title |
---|
NV931/68 * |
NV931/72 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0032920A1 (en) * | 1979-07-31 | 1981-08-05 | Western Electric Co | ZONE MELTING METHOD WITH PHOTO-INDUCED TEMPARATURE RADIENT. |
EP0032920A4 (en) * | 1979-07-31 | 1984-05-29 | Western Electric Co | ZONE MELTING METHOD WITH PHOTO-INDUCED TEMPARATURE RADIENT. |
Also Published As
Publication number | Publication date |
---|---|
DE2621418A1 (de) | 1976-12-09 |
JPS51140803A (en) | 1976-12-04 |
SE416597B (sv) | 1981-01-19 |
SE7605678L (sv) | 1976-11-20 |
GB1545113A (en) | 1979-05-02 |
DE2621418C2 (de) | 1981-12-17 |
NL7605260A (nl) | 1976-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |