FR2312112A1 - METHOD AND APPARATUS FOR DOPING SEMICONDUCTOR BODIES BY A TEMPERATURE GRADIENT ZONE FUSION METHOD - Google Patents

METHOD AND APPARATUS FOR DOPING SEMICONDUCTOR BODIES BY A TEMPERATURE GRADIENT ZONE FUSION METHOD

Info

Publication number
FR2312112A1
FR2312112A1 FR7615029A FR7615029A FR2312112A1 FR 2312112 A1 FR2312112 A1 FR 2312112A1 FR 7615029 A FR7615029 A FR 7615029A FR 7615029 A FR7615029 A FR 7615029A FR 2312112 A1 FR2312112 A1 FR 2312112A1
Authority
FR
France
Prior art keywords
temperature gradient
semiconductor bodies
doping semiconductor
gradient zone
zone fusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7615029A
Other languages
French (fr)
Inventor
John Kwadwo Boah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/578,807 external-priority patent/US4001047A/en
Priority claimed from US05/578,736 external-priority patent/US4041278A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2312112A1 publication Critical patent/FR2312112A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7615029A 1975-05-19 1976-05-19 METHOD AND APPARATUS FOR DOPING SEMICONDUCTOR BODIES BY A TEMPERATURE GRADIENT ZONE FUSION METHOD Withdrawn FR2312112A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/578,807 US4001047A (en) 1975-05-19 1975-05-19 Temperature gradient zone melting utilizing infrared radiation
US05/578,736 US4041278A (en) 1975-05-19 1975-05-19 Heating apparatus for temperature gradient zone melting

Publications (1)

Publication Number Publication Date
FR2312112A1 true FR2312112A1 (en) 1976-12-17

Family

ID=27077566

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615029A Withdrawn FR2312112A1 (en) 1975-05-19 1976-05-19 METHOD AND APPARATUS FOR DOPING SEMICONDUCTOR BODIES BY A TEMPERATURE GRADIENT ZONE FUSION METHOD

Country Status (6)

Country Link
JP (1) JPS51140803A (en)
DE (1) DE2621418C2 (en)
FR (1) FR2312112A1 (en)
GB (1) GB1545113A (en)
NL (1) NL7605260A (en)
SE (1) SE416597B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032920A1 (en) * 1979-07-31 1981-08-05 Western Electric Co Photo-induced temperature gradient zone melting.

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638270C2 (en) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Process for the production of large, self-supporting plates made of silicon
JPS5939711A (en) * 1982-08-26 1984-03-05 Ushio Inc Method for epitaxially growing amorphous silicon or polycrystalline silicon on wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450901A1 (en) * 1973-10-30 1975-05-07 Gen Electric SEMI-CONDUCTOR DEVICE WITH A LARGE ASPECT RATIO HAVING PN TRANSITIONS AND METHOD OF MANUFACTURING

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2054828B2 (en) * 1970-11-07 1974-06-27 Applied Materials Technology, Inc. Santa Clara, Calif. (V.St.A.) Device and method for vapor deposition on substrates
US3904442A (en) * 1973-10-30 1975-09-09 Gen Electric Method of making isolation grids in bodies of semiconductor material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450901A1 (en) * 1973-10-30 1975-05-07 Gen Electric SEMI-CONDUCTOR DEVICE WITH A LARGE ASPECT RATIO HAVING PN TRANSITIONS AND METHOD OF MANUFACTURING

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV931/68 *
NV931/72 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032920A1 (en) * 1979-07-31 1981-08-05 Western Electric Co Photo-induced temperature gradient zone melting.
EP0032920A4 (en) * 1979-07-31 1984-05-29 Western Electric Co Photo-induced temperature gradient zone melting.

Also Published As

Publication number Publication date
GB1545113A (en) 1979-05-02
SE7605678L (en) 1976-11-20
DE2621418C2 (en) 1981-12-17
SE416597B (en) 1981-01-19
DE2621418A1 (en) 1976-12-09
JPS51140803A (en) 1976-12-04
NL7605260A (en) 1976-11-23

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Legal Events

Date Code Title Description
ST Notification of lapse