NL7605260A - METHOD AND INSTALLATION FOR ZONE MELTING WITH TEMPERATURE GRADIENT AND INFRARED RAYS. - Google Patents

METHOD AND INSTALLATION FOR ZONE MELTING WITH TEMPERATURE GRADIENT AND INFRARED RAYS.

Info

Publication number
NL7605260A
NL7605260A NL7605260A NL7605260A NL7605260A NL 7605260 A NL7605260 A NL 7605260A NL 7605260 A NL7605260 A NL 7605260A NL 7605260 A NL7605260 A NL 7605260A NL 7605260 A NL7605260 A NL 7605260A
Authority
NL
Netherlands
Prior art keywords
installation
infrared rays
temperature gradient
zone melting
melting
Prior art date
Application number
NL7605260A
Other languages
Dutch (nl)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/578,807 external-priority patent/US4001047A/en
Priority claimed from US05/578,736 external-priority patent/US4041278A/en
Application filed by Gen Electric filed Critical Gen Electric
Publication of NL7605260A publication Critical patent/NL7605260A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL7605260A 1975-05-19 1976-05-17 METHOD AND INSTALLATION FOR ZONE MELTING WITH TEMPERATURE GRADIENT AND INFRARED RAYS. NL7605260A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/578,807 US4001047A (en) 1975-05-19 1975-05-19 Temperature gradient zone melting utilizing infrared radiation
US05/578,736 US4041278A (en) 1975-05-19 1975-05-19 Heating apparatus for temperature gradient zone melting

Publications (1)

Publication Number Publication Date
NL7605260A true NL7605260A (en) 1976-11-23

Family

ID=27077566

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7605260A NL7605260A (en) 1975-05-19 1976-05-17 METHOD AND INSTALLATION FOR ZONE MELTING WITH TEMPERATURE GRADIENT AND INFRARED RAYS.

Country Status (6)

Country Link
JP (1) JPS51140803A (en)
DE (1) DE2621418C2 (en)
FR (1) FR2312112A1 (en)
GB (1) GB1545113A (en)
NL (1) NL7605260A (en)
SE (1) SE416597B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638270C2 (en) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Process for the production of large, self-supporting plates made of silicon
US4257824A (en) * 1979-07-31 1981-03-24 Bell Telephone Laboratories, Incorporated Photo-induced temperature gradient zone melting
JPS5939711A (en) * 1982-08-26 1984-03-05 Ushio Inc Method for epitaxially growing amorphous silicon or polycrystalline silicon on wafer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2054828B2 (en) * 1970-11-07 1974-06-27 Applied Materials Technology, Inc. Santa Clara, Calif. (V.St.A.) Device and method for vapor deposition on substrates
US3904442A (en) * 1973-10-30 1975-09-09 Gen Electric Method of making isolation grids in bodies of semiconductor material
US3897277A (en) * 1973-10-30 1975-07-29 Gen Electric High aspect ratio P-N junctions by the thermal gradient zone melting technique

Also Published As

Publication number Publication date
DE2621418C2 (en) 1981-12-17
DE2621418A1 (en) 1976-12-09
GB1545113A (en) 1979-05-02
FR2312112A1 (en) 1976-12-17
JPS51140803A (en) 1976-12-04
SE7605678L (en) 1976-11-20
SE416597B (en) 1981-01-19

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Legal Events

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BV The patent application has lapsed