GB1543132A - Field-effect transistors - Google Patents

Field-effect transistors

Info

Publication number
GB1543132A
GB1543132A GB38062/77A GB3806277A GB1543132A GB 1543132 A GB1543132 A GB 1543132A GB 38062/77 A GB38062/77 A GB 38062/77A GB 3806277 A GB3806277 A GB 3806277A GB 1543132 A GB1543132 A GB 1543132A
Authority
GB
United Kingdom
Prior art keywords
field
effect transistors
transistors
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38062/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1543132A publication Critical patent/GB1543132A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB38062/77A 1976-09-14 1977-09-13 Field-effect transistors Expired GB1543132A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762641302 DE2641302A1 (de) 1976-09-14 1976-09-14 N-kanal mis-fet in esfi-technik

Publications (1)

Publication Number Publication Date
GB1543132A true GB1543132A (en) 1979-03-28

Family

ID=5987864

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38062/77A Expired GB1543132A (en) 1976-09-14 1977-09-13 Field-effect transistors

Country Status (7)

Country Link
JP (1) JPS5336186A (fr)
BE (1) BE858694A (fr)
DE (1) DE2641302A1 (fr)
FR (1) FR2364542A1 (fr)
GB (1) GB1543132A (fr)
IT (1) IT1084222B (fr)
NL (1) NL7710034A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
WO2001050516A1 (fr) * 2000-01-07 2001-07-12 Seiko Epson Corporation Procede de fabrication de transistor en couches minces (tft)
WO2001050515A1 (fr) * 2000-01-07 2001-07-12 Seiko Epson Corporation Transistor a couches minces

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820296B2 (ja) * 1979-02-16 1983-04-22 日本化成株式会社 気液接触装置
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
NL8701251A (nl) * 1987-05-26 1988-12-16 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
JP2782781B2 (ja) * 1989-05-20 1998-08-06 富士通株式会社 半導体装置の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
WO2001050516A1 (fr) * 2000-01-07 2001-07-12 Seiko Epson Corporation Procede de fabrication de transistor en couches minces (tft)
WO2001050515A1 (fr) * 2000-01-07 2001-07-12 Seiko Epson Corporation Transistor a couches minces
US6621101B2 (en) 2000-01-07 2003-09-16 Seiko Epson Corporation Thin-film transistor
GB2358079B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
US6727123B2 (en) 2000-01-07 2004-04-27 Seiko Epson Corporation Method for manufacturing a thin-film transistor comprising a recombination center
GB2358080B (en) * 2000-01-07 2004-06-02 Seiko Epson Corp Method of manufacturing a thin-film transistor

Also Published As

Publication number Publication date
BE858694A (fr) 1978-01-02
IT1084222B (it) 1985-05-25
FR2364542A1 (fr) 1978-04-07
JPS5336186A (en) 1978-04-04
DE2641302A1 (de) 1978-03-16
NL7710034A (nl) 1978-03-16

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee