GB1533191A - Pressure-sensitive semiconductor bodies and pressure-sensitive devices including such bodies - Google Patents
Pressure-sensitive semiconductor bodies and pressure-sensitive devices including such bodiesInfo
- Publication number
- GB1533191A GB1533191A GB1346477A GB1346477A GB1533191A GB 1533191 A GB1533191 A GB 1533191A GB 1346477 A GB1346477 A GB 1346477A GB 1346477 A GB1346477 A GB 1346477A GB 1533191 A GB1533191 A GB 1533191A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pressure
- bodies
- sensitive
- semiconductor
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000463 material Substances 0.000 abstract 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910017214 AsGa Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Recrystallisation Techniques (AREA)
Abstract
1533191 Semiconductor transducers GOSUDAR N-I I PROEKT INST REDKOMETALLICHE PROMYSHLENNOSTI GIREDMET 30 March 1977 13464/77 Heading H1K A pressure sensitive semiconductor device comprises two sets of superposed layers of semiconductor material of the type AB 1-x C x formed from two materials, one having a direct and the other an indirect forbidden conduction band, the mean value of x for the two sets of layers being different, and A being a III or V element and B and C being V or III elements. In the examples described, direct forbidden band materials are GaAs and InP, and indirect forbidden band materials are GaP and AlAs. The resulting semiconductor layer material may be GaAs 1-x P x , AsGa 1-x Al x and InP 1-x Ga x . The value of x across the layer thickness may be constant or sinusoidally varying.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1346477A GB1533191A (en) | 1977-03-30 | 1977-03-30 | Pressure-sensitive semiconductor bodies and pressure-sensitive devices including such bodies |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1346477A GB1533191A (en) | 1977-03-30 | 1977-03-30 | Pressure-sensitive semiconductor bodies and pressure-sensitive devices including such bodies |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1533191A true GB1533191A (en) | 1978-11-22 |
Family
ID=10023456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1346477A Expired GB1533191A (en) | 1977-03-30 | 1977-03-30 | Pressure-sensitive semiconductor bodies and pressure-sensitive devices including such bodies |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1533191A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2235090A (en) * | 1989-08-17 | 1991-02-20 | Vaisala Oy | "Contacts for semiconductor transducers" |
-
1977
- 1977-03-30 GB GB1346477A patent/GB1533191A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2235090A (en) * | 1989-08-17 | 1991-02-20 | Vaisala Oy | "Contacts for semiconductor transducers" |
GB2235090B (en) * | 1989-08-17 | 1993-11-17 | Vaisala Oy | Multilayer semi-conductor elements and their manufacture |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |