CA888444A - Method of and device for epitaxially providing a layer of a semiconductor material on one, substantially flat side of a single crystal substrate and article, in particular semiconductor device, manufactured by using said method
- Google Patents
Method of and device for epitaxially providing a layer of a semiconductor material on one, substantially flat side of a single crystal substrate and article, in particular semiconductor device, manufactured by using said method
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA888444A
Inventor
Andre Elie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Publication date
Application grantedgrantedCritical
Publication of CA888444ApublicationCriticalpatent/CA888444A/en
CA888444AMethod of and device for epitaxially providing a layer of a semiconductor material on one, substantially flat side of a single crystal substrate and article, in particular semiconductor device, manufactured by using said method
ExpiredCA888444A
(en)
Method of and device for epitaxially providing a layer of a semiconductor material on one, substantially flat side of a single crystal substrate and article, in particular semiconductor device, manufactured by using said method
Method of and device for epitaxially providing a layer of a semiconductor material on one, substantially flat side of a single crystal substrate and article, in particular semiconductor device, manufactured by using said method