CA888444A - Method of and device for epitaxially providing a layer of a semiconductor material on one, substantially flat side of a single crystal substrate and article, in particular semiconductor device, manufactured by using said method - Google Patents

Method of and device for epitaxially providing a layer of a semiconductor material on one, substantially flat side of a single crystal substrate and article, in particular semiconductor device, manufactured by using said method

Info

Publication number
CA888444A
CA888444A CA888444A CA888444DA CA888444A CA 888444 A CA888444 A CA 888444A CA 888444 A CA888444 A CA 888444A CA 888444D A CA888444D A CA 888444DA CA 888444 A CA888444 A CA 888444A
Authority
CA
Canada
Prior art keywords
article
manufactured
single crystal
layer
substantially flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA888444A
Inventor
Andre Elie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Publication date
Application granted granted Critical
Publication of CA888444A publication Critical patent/CA888444A/en
Expired legal-status Critical Current

Links

CA888444A Method of and device for epitaxially providing a layer of a semiconductor material on one, substantially flat side of a single crystal substrate and article, in particular semiconductor device, manufactured by using said method Expired CA888444A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA888444T

Publications (1)

Publication Number Publication Date
CA888444A true CA888444A (en) 1971-12-14

Family

ID=36394659

Family Applications (1)

Application Number Title Priority Date Filing Date
CA888444A Expired CA888444A (en) Method of and device for epitaxially providing a layer of a semiconductor material on one, substantially flat side of a single crystal substrate and article, in particular semiconductor device, manufactured by using said method

Country Status (1)

Country Link
CA (1) CA888444A (en)

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