CA875519A - Method for etching single crystal silicon substrates and depositing silicon thereon - Google Patents

Method for etching single crystal silicon substrates and depositing silicon thereon

Info

Publication number
CA875519A
CA875519A CA875519A CA875519DA CA875519A CA 875519 A CA875519 A CA 875519A CA 875519 A CA875519 A CA 875519A CA 875519D A CA875519D A CA 875519DA CA 875519 A CA875519 A CA 875519A
Authority
CA
Canada
Prior art keywords
single crystal
silicon
etching single
depositing
crystal silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA875519A
Inventor
D. Dyer Lawrence
C. Bracken Ronald
W. Taylor Guy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Publication date
Application granted granted Critical
Publication of CA875519A publication Critical patent/CA875519A/en
Expired legal-status Critical Current

Links

CA875519A Method for etching single crystal silicon substrates and depositing silicon thereon Expired CA875519A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA875519T

Publications (1)

Publication Number Publication Date
CA875519A true CA875519A (en) 1971-07-13

Family

ID=36361429

Family Applications (1)

Application Number Title Priority Date Filing Date
CA875519A Expired CA875519A (en) Method for etching single crystal silicon substrates and depositing silicon thereon

Country Status (1)

Country Link
CA (1) CA875519A (en)

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