GB1522269A - Method of forming a semiconductor device - Google Patents

Method of forming a semiconductor device

Info

Publication number
GB1522269A
GB1522269A GB44551/76A GB4455176A GB1522269A GB 1522269 A GB1522269 A GB 1522269A GB 44551/76 A GB44551/76 A GB 44551/76A GB 4455176 A GB4455176 A GB 4455176A GB 1522269 A GB1522269 A GB 1522269A
Authority
GB
United Kingdom
Prior art keywords
substrate
diffused
type
implanted
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44551/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of GB1522269A publication Critical patent/GB1522269A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB44551/76A 1975-11-10 1976-10-27 Method of forming a semiconductor device Expired GB1522269A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/630,490 US4001050A (en) 1975-11-10 1975-11-10 Method of fabricating an isolated p-n junction

Publications (1)

Publication Number Publication Date
GB1522269A true GB1522269A (en) 1978-08-23

Family

ID=24527389

Family Applications (1)

Application Number Title Priority Date Filing Date
GB44551/76A Expired GB1522269A (en) 1975-11-10 1976-10-27 Method of forming a semiconductor device

Country Status (7)

Country Link
US (1) US4001050A (enExample)
JP (1) JPS5260068A (enExample)
DE (1) DE2650865A1 (enExample)
FR (1) FR2331153A1 (enExample)
GB (1) GB1522269A (enExample)
IT (1) IT1067265B (enExample)
NL (1) NL7612257A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3044132A1 (de) * 1980-11-24 1982-07-15 Siemens AG, 1000 Berlin und 8000 München Dynamische halbleiter-speicherzelle mit wahlfreiem zugriff und verfahren zu ihrer herstellung
US5250837A (en) * 1991-05-17 1993-10-05 Delco Electronics Corporation Method for dielectrically isolating integrated circuits using doped oxide sidewalls
US5250461A (en) * 1991-05-17 1993-10-05 Delco Electronics Corporation Method for dielectrically isolating integrated circuits using doped oxide sidewalls
US6509237B2 (en) * 2001-05-11 2003-01-21 Hynix Semiconductor America, Inc. Flash memory cell fabrication sequence
US6492710B1 (en) * 2001-06-07 2002-12-10 Cypress Semiconductor Corp. Substrate isolated transistor
US6905955B2 (en) * 2003-02-04 2005-06-14 Micron Technology, Inc. Methods of forming conductive connections, and methods of forming nanofeatures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717507A (en) * 1969-06-19 1973-02-20 Shibaura Electric Co Ltd Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion
NL96608C (enExample) * 1969-10-03
BE759667A (fr) * 1969-12-01 1971-06-01 Philips Nv Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3856578A (en) * 1972-03-13 1974-12-24 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits

Also Published As

Publication number Publication date
DE2650865A1 (de) 1977-05-18
JPS6156607B2 (enExample) 1986-12-03
JPS5260068A (en) 1977-05-18
IT1067265B (it) 1985-03-16
NL7612257A (nl) 1977-05-12
US4001050A (en) 1977-01-04
FR2331153A1 (fr) 1977-06-03
FR2331153B1 (enExample) 1979-03-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee