GB1515260A - Reverse conduction thyristor - Google Patents
Reverse conduction thyristorInfo
- Publication number
- GB1515260A GB1515260A GB1272677A GB1272677A GB1515260A GB 1515260 A GB1515260 A GB 1515260A GB 1272677 A GB1272677 A GB 1272677A GB 1272677 A GB1272677 A GB 1272677A GB 1515260 A GB1515260 A GB 1515260A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- thyristor
- zone
- diode
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7610265A FR2347781A1 (fr) | 1976-04-08 | 1976-04-08 | Thyristor a conduction inverse |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1515260A true GB1515260A (en) | 1978-06-21 |
Family
ID=9171563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1272677A Expired GB1515260A (en) | 1976-04-08 | 1977-03-25 | Reverse conduction thyristor |
Country Status (7)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4572375A (en) * | 1984-11-26 | 1986-02-25 | Baer Carl D | Container for dispersant |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57109372A (en) * | 1980-12-25 | 1982-07-07 | Mitsubishi Electric Corp | Semiconductor device |
FR2524715A1 (fr) * | 1982-03-30 | 1983-10-07 | Thomson Csf | Diode rapide |
-
1976
- 1976-04-08 FR FR7610265A patent/FR2347781A1/fr active Granted
-
1977
- 1977-03-23 CH CH364177A patent/CH600574A5/xx not_active IP Right Cessation
- 1977-03-24 BE BE1008044A patent/BE852825A/xx unknown
- 1977-03-25 GB GB1272677A patent/GB1515260A/en not_active Expired
- 1977-04-05 DE DE19772715206 patent/DE2715206A1/de not_active Withdrawn
- 1977-04-05 NL NL7703747A patent/NL7703747A/xx not_active Application Discontinuation
- 1977-04-05 IT IT2214577A patent/IT1084467B/it active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4572375A (en) * | 1984-11-26 | 1986-02-25 | Baer Carl D | Container for dispersant |
Also Published As
Publication number | Publication date |
---|---|
DE2715206A1 (de) | 1977-10-20 |
BE852825A (fr) | 1977-09-26 |
FR2347781B1 (US07709020-20100504-C00068.png) | 1979-10-05 |
CH600574A5 (US07709020-20100504-C00068.png) | 1978-06-15 |
FR2347781A1 (fr) | 1977-11-04 |
IT1084467B (it) | 1985-05-25 |
NL7703747A (nl) | 1977-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |