GB1500128A - Light emitting device - Google Patents

Light emitting device

Info

Publication number
GB1500128A
GB1500128A GB5799273A GB5799273A GB1500128A GB 1500128 A GB1500128 A GB 1500128A GB 5799273 A GB5799273 A GB 5799273A GB 5799273 A GB5799273 A GB 5799273A GB 1500128 A GB1500128 A GB 1500128A
Authority
GB
United Kingdom
Prior art keywords
hydrogen
layer
mil
gallium arsenide
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5799273A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB5799273A priority Critical patent/GB1500128A/en
Publication of GB1500128A publication Critical patent/GB1500128A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

1500128 Light emitting diodes D H POMMERRENIG 16 Dec 1974 [14 Dec 1973] 57992/73 Heading H1K In the manufacture of a light-emitting device an epitaxial layer of gallium arsenide, phosphide or arsenophosphide is grown on a manocrystalline layer of gallium arsenide, which has been deposited from a vapour phase containing arsine as the source of arsenic on a germanium substrate. As described a prepared 8 mil thick wafer of 0À001 ohm cm. monocrystalline germanium is placed in a continuous flow furnace downstream of a gallium filled boat. After flushing the furnace with hydrogen while heating to 7000‹ C. hydrogen chloride and a mixture of arsine and hydrogen are introduced into the hydrogen flow to grow a 1 mil gallium arsenide layer. Then phosphine and hydrogen selenide are additionally introduced to cause epitaxial deposition of a 4 mil layer of N-type gallium arsenophosphide and the resulting composite allowed to cool in a flow of hydrogen. A PN junction is subsequently formed in this layer by diffusion and the composite masked with wax, etched to mesh form, contacted by thermocompression bonded wires, and encapsulated.
GB5799273A 1974-12-16 1974-12-16 Light emitting device Expired GB1500128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5799273A GB1500128A (en) 1974-12-16 1974-12-16 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5799273A GB1500128A (en) 1974-12-16 1974-12-16 Light emitting device

Publications (1)

Publication Number Publication Date
GB1500128A true GB1500128A (en) 1978-02-08

Family

ID=10480541

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5799273A Expired GB1500128A (en) 1974-12-16 1974-12-16 Light emitting device

Country Status (1)

Country Link
GB (1) GB1500128A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997020319A1 (en) * 1995-11-30 1997-06-05 Sgs-Thomson Microelectronics S.R.L. Solid fuel for cold nuclear fusion reactors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997020319A1 (en) * 1995-11-30 1997-06-05 Sgs-Thomson Microelectronics S.R.L. Solid fuel for cold nuclear fusion reactors

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee