GB1496599A - Variable emission strip width semiconductor laser - Google Patents

Variable emission strip width semiconductor laser

Info

Publication number
GB1496599A
GB1496599A GB33750/75A GB3375075A GB1496599A GB 1496599 A GB1496599 A GB 1496599A GB 33750/75 A GB33750/75 A GB 33750/75A GB 3375075 A GB3375075 A GB 3375075A GB 1496599 A GB1496599 A GB 1496599A
Authority
GB
United Kingdom
Prior art keywords
layer
laser
main
layers
followed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33750/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of GB1496599A publication Critical patent/GB1496599A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203Transistor-type lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233Controlling other output parameters than intensity or frequency
    • H01S5/06236Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233Controlling other output parameters than intensity or frequency
    • H01S5/0624Controlling other output parameters than intensity or frequency controlling the near- or far field

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
GB33750/75A 1974-09-17 1975-08-13 Variable emission strip width semiconductor laser Expired GB1496599A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA209,402A CA1006255A (en) 1974-09-17 1974-09-17 Variable stripe width semiconductor laser

Publications (1)

Publication Number Publication Date
GB1496599A true GB1496599A (en) 1977-12-30

Family

ID=4101166

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33750/75A Expired GB1496599A (en) 1974-09-17 1975-08-13 Variable emission strip width semiconductor laser

Country Status (7)

Country Link
JP (1) JPS5154384A (enrdf_load_stackoverflow)
CA (1) CA1006255A (enrdf_load_stackoverflow)
DE (1) DE2536377A1 (enrdf_load_stackoverflow)
FR (1) FR2285733A1 (enrdf_load_stackoverflow)
GB (1) GB1496599A (enrdf_load_stackoverflow)
NL (1) NL7509409A (enrdf_load_stackoverflow)
SE (1) SE414692B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607299A (nl) * 1976-07-02 1978-01-04 Philips Nv Injektielaser.
GB1557072A (en) * 1976-10-13 1979-12-05 Standard Telephones Cables Ltd Stripe lears
GB2111743B (en) * 1981-08-25 1985-11-27 Handotai Kenkyu Shinkokai Semiconductor laser
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
JP2685778B2 (ja) * 1988-02-10 1997-12-03 株式会社東芝 半導体レーザ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576586A (en) * 1968-08-05 1971-04-27 Bell & Howell Co Variable area injection luminescent device
US3702975A (en) * 1970-12-09 1972-11-14 Bell Telephone Labor Inc Low threshold stripe geometry injection laser
FR2192432B1 (enrdf_load_stackoverflow) * 1972-07-13 1975-09-05 Radiotechnique Compelec
JPS5628038B2 (enrdf_load_stackoverflow) * 1974-05-31 1981-06-29

Also Published As

Publication number Publication date
JPS5154384A (en) 1976-05-13
FR2285733A1 (fr) 1976-04-16
SE414692B (sv) 1980-08-11
SE7510340L (sv) 1976-03-18
CA1006255A (en) 1977-03-01
NL7509409A (nl) 1976-03-19
DE2536377A1 (de) 1976-03-25

Similar Documents

Publication Publication Date Title
US4011113A (en) Method of making injection lasers by epitaxial deposition and selective etching
GB1464237A (en) Method of making a double heterostructure junction laser
US4727557A (en) Phased array semiconductor lasers fabricated from impurity induced disordering
US4430741A (en) Semiconductor laser device
US4352187A (en) Semiconductor laser diode
US4121179A (en) Semiconductor injection laser
US4441187A (en) A semiconductor laser light source
US4238764A (en) Solid state semiconductor element and contact thereupon
GB1496599A (en) Variable emission strip width semiconductor laser
US5170405A (en) Semiconductor diode laser having smaller beam divergence
GB1419695A (enrdf_load_stackoverflow)
GB1502953A (en) Semiconductor device and a method of fabricating the same
US3959808A (en) Variable stripe width semiconductor laser
US4686679A (en) Window VSIS semiconductor laser
GB1500156A (en) Semiconductor injection laser
JPS595675A (ja) 半導体装置
JPS58106885A (ja) 半導体レ−ザ
GB1523483A (en) Semiconductor optical modulator
KR100244237B1 (ko) 매립형 반도체 레이저 다이오드
GB1258360A (enrdf_load_stackoverflow)
JPS6237557B2 (enrdf_load_stackoverflow)
JP3307695B2 (ja) 量子井戸型発光素子
CA1150388A (en) High power diode lasers
EP0189296B1 (en) A semiconductor laser device
JPS59108386A (ja) 半導体発光装置

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee