FR2192432B1 - - Google Patents

Info

Publication number
FR2192432B1
FR2192432B1 FR7225492A FR7225492A FR2192432B1 FR 2192432 B1 FR2192432 B1 FR 2192432B1 FR 7225492 A FR7225492 A FR 7225492A FR 7225492 A FR7225492 A FR 7225492A FR 2192432 B1 FR2192432 B1 FR 2192432B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7225492A
Other languages
French (fr)
Other versions
FR2192432A1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7225492A priority Critical patent/FR2192432B1/fr
Priority to JP7716473A priority patent/JPS5214154B2/ja
Priority to IT69059/73A priority patent/IT991709B/it
Priority to GB3279473A priority patent/GB1435135A/en
Publication of FR2192432A1 publication Critical patent/FR2192432A1/fr
Priority to US05/578,168 priority patent/US3978507A/en
Application granted granted Critical
Publication of FR2192432B1 publication Critical patent/FR2192432B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/052—Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
FR7225492A 1972-07-13 1972-07-13 Expired FR2192432B1 (enrdf_load_stackoverflow)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7225492A FR2192432B1 (enrdf_load_stackoverflow) 1972-07-13 1972-07-13
JP7716473A JPS5214154B2 (enrdf_load_stackoverflow) 1972-07-13 1973-07-10
IT69059/73A IT991709B (it) 1972-07-13 1973-07-10 Dispositivo elettroluminescente ad emissione localizzata
GB3279473A GB1435135A (en) 1972-07-13 1973-07-10 Electroluminescent semiconductor devices method of machining a fixing slot in a fixed b
US05/578,168 US3978507A (en) 1972-07-13 1975-05-16 Electroluminescent device having localized emission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7225492A FR2192432B1 (enrdf_load_stackoverflow) 1972-07-13 1972-07-13

Publications (2)

Publication Number Publication Date
FR2192432A1 FR2192432A1 (enrdf_load_stackoverflow) 1974-02-08
FR2192432B1 true FR2192432B1 (enrdf_load_stackoverflow) 1975-09-05

Family

ID=9101826

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7225492A Expired FR2192432B1 (enrdf_load_stackoverflow) 1972-07-13 1972-07-13

Country Status (4)

Country Link
JP (1) JPS5214154B2 (enrdf_load_stackoverflow)
FR (1) FR2192432B1 (enrdf_load_stackoverflow)
GB (1) GB1435135A (enrdf_load_stackoverflow)
IT (1) IT991709B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1006255A (en) * 1974-09-17 1977-03-01 Frederick D. King Variable stripe width semiconductor laser
GB1557072A (en) * 1976-10-13 1979-12-05 Standard Telephones Cables Ltd Stripe lears
JPS547151U (enrdf_load_stackoverflow) * 1977-06-16 1979-01-18
JPS56154277A (en) * 1980-05-02 1981-11-28 Sanko Metal Ind Corp Ltd Base material for joining by brazing
JPS56158272A (en) * 1980-05-07 1981-12-05 Sanko Metal Ind Corp Ltd Method and apparatus for joining building member
JPS56158271A (en) * 1980-05-07 1981-12-05 Sanko Metal Ind Corp Ltd Manufacture of base metal having brazing plated layer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3102201A (en) * 1958-12-15 1963-08-27 Rca Corp Semiconductor device for generating modulated radiation

Also Published As

Publication number Publication date
JPS5214154B2 (enrdf_load_stackoverflow) 1977-04-19
IT991709B (it) 1975-08-30
JPS4946690A (enrdf_load_stackoverflow) 1974-05-04
GB1435135A (en) 1976-05-12
FR2192432A1 (enrdf_load_stackoverflow) 1974-02-08

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Legal Events

Date Code Title Description
ST Notification of lapse