GB1494348A - Semiconductor light emitting devices - Google Patents

Semiconductor light emitting devices

Info

Publication number
GB1494348A
GB1494348A GB53088/74A GB5308874A GB1494348A GB 1494348 A GB1494348 A GB 1494348A GB 53088/74 A GB53088/74 A GB 53088/74A GB 5308874 A GB5308874 A GB 5308874A GB 1494348 A GB1494348 A GB 1494348A
Authority
GB
United Kingdom
Prior art keywords
indium phosphide
type
cadmium
dec
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB53088/74A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US423453A external-priority patent/US3875451A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1494348A publication Critical patent/GB1494348A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
GB53088/74A 1973-12-10 1974-12-09 Semiconductor light emitting devices Expired GB1494348A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US423453A US3875451A (en) 1972-12-15 1973-12-10 Near-infrared light-emitting and light-detecting indium phosphide homodiodes including cadmium tin phosphide therein

Publications (1)

Publication Number Publication Date
GB1494348A true GB1494348A (en) 1977-12-07

Family

ID=23678957

Family Applications (1)

Application Number Title Priority Date Filing Date
GB53088/74A Expired GB1494348A (en) 1973-12-10 1974-12-09 Semiconductor light emitting devices

Country Status (8)

Country Link
JP (1) JPS5092093A (ja)
BE (1) BE823075A (ja)
CA (1) CA1018642A (ja)
DE (1) DE2457460A1 (ja)
FR (1) FR2254110B1 (ja)
GB (1) GB1494348A (ja)
IT (1) IT1027038B (ja)
NL (1) NL7415996A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112201B (zh) * 2015-02-09 2020-07-28 住友电气工业株式会社 磷化铟衬底、检查磷化铟衬底的方法和制造磷化铟衬底的方法

Also Published As

Publication number Publication date
DE2457460A1 (de) 1975-06-12
NL7415996A (nl) 1975-06-12
IT1027038B (it) 1978-11-20
FR2254110B1 (ja) 1979-02-23
BE823075A (fr) 1975-04-01
FR2254110A1 (ja) 1975-07-04
CA1018642A (en) 1977-10-04
JPS5092093A (ja) 1975-07-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee