BE823075A - Diodes emettrices-detectrices a base de phosphure d'indium et contenant du cdsnp2 - Google Patents

Diodes emettrices-detectrices a base de phosphure d'indium et contenant du cdsnp2

Info

Publication number
BE823075A
BE823075A BE151269A BE151269A BE823075A BE 823075 A BE823075 A BE 823075A BE 151269 A BE151269 A BE 151269A BE 151269 A BE151269 A BE 151269A BE 823075 A BE823075 A BE 823075A
Authority
BE
Belgium
Prior art keywords
cdsnp2
indium phosphide
based transmitter
detector diodes
phosphide based
Prior art date
Application number
BE151269A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US423453A external-priority patent/US3875451A/en
Application filed filed Critical
Publication of BE823075A publication Critical patent/BE823075A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
BE151269A 1973-12-10 1974-12-06 Diodes emettrices-detectrices a base de phosphure d'indium et contenant du cdsnp2 BE823075A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US423453A US3875451A (en) 1972-12-15 1973-12-10 Near-infrared light-emitting and light-detecting indium phosphide homodiodes including cadmium tin phosphide therein

Publications (1)

Publication Number Publication Date
BE823075A true BE823075A (fr) 1975-04-01

Family

ID=23678957

Family Applications (1)

Application Number Title Priority Date Filing Date
BE151269A BE823075A (fr) 1973-12-10 1974-12-06 Diodes emettrices-detectrices a base de phosphure d'indium et contenant du cdsnp2

Country Status (8)

Country Link
JP (1) JPS5092093A (xx)
BE (1) BE823075A (xx)
CA (1) CA1018642A (xx)
DE (1) DE2457460A1 (xx)
FR (1) FR2254110B1 (xx)
GB (1) GB1494348A (xx)
IT (1) IT1027038B (xx)
NL (1) NL7415996A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111952150A (zh) * 2015-02-09 2020-11-17 住友电气工业株式会社 磷化铟衬底和制造磷化铟衬底的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111952150A (zh) * 2015-02-09 2020-11-17 住友电气工业株式会社 磷化铟衬底和制造磷化铟衬底的方法
CN111952150B (zh) * 2015-02-09 2023-06-20 住友电气工业株式会社 磷化铟衬底和制造磷化铟衬底的方法

Also Published As

Publication number Publication date
DE2457460A1 (de) 1975-06-12
NL7415996A (nl) 1975-06-12
IT1027038B (it) 1978-11-20
FR2254110B1 (xx) 1979-02-23
FR2254110A1 (xx) 1975-07-04
CA1018642A (en) 1977-10-04
GB1494348A (en) 1977-12-07
JPS5092093A (xx) 1975-07-23

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