CA1018642A - Inp led's doped with cd sn p2 - Google Patents

Inp led's doped with cd sn p2

Info

Publication number
CA1018642A
CA1018642A CA208,851A CA208851A CA1018642A CA 1018642 A CA1018642 A CA 1018642A CA 208851 A CA208851 A CA 208851A CA 1018642 A CA1018642 A CA 1018642A
Authority
CA
Canada
Prior art keywords
doped
inp
led
inp led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA208,851A
Other languages
French (fr)
Other versions
CA208851S (en
Inventor
Klaus J. Bachmann
Ernest Buehler
Joseph L. Shay
Jack H. Wernick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US423453A external-priority patent/US3875451A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1018642A publication Critical patent/CA1018642A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061Tipping system, e.g. by rotation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44Gallium phosphide
CA208,851A 1973-12-10 1974-09-10 Inp led's doped with cd sn p2 Expired CA1018642A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US423453A US3875451A (en) 1972-12-15 1973-12-10 Near-infrared light-emitting and light-detecting indium phosphide homodiodes including cadmium tin phosphide therein

Publications (1)

Publication Number Publication Date
CA1018642A true CA1018642A (en) 1977-10-04

Family

ID=23678957

Family Applications (1)

Application Number Title Priority Date Filing Date
CA208,851A Expired CA1018642A (en) 1973-12-10 1974-09-10 Inp led's doped with cd sn p2

Country Status (8)

Country Link
JP (1) JPS5092093A (en)
BE (1) BE823075A (en)
CA (1) CA1018642A (en)
DE (1) DE2457460A1 (en)
FR (1) FR2254110B1 (en)
GB (1) GB1494348A (en)
IT (1) IT1027038B (en)
NL (1) NL7415996A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016129172A1 (en) * 2015-02-09 2016-08-18 住友電気工業株式会社 Indium phosphorus substrate, indium phosphorus substrate inspection method, and indium phosphorus substrate manufacturing method

Also Published As

Publication number Publication date
FR2254110B1 (en) 1979-02-23
FR2254110A1 (en) 1975-07-04
NL7415996A (en) 1975-06-12
IT1027038B (en) 1978-11-20
GB1494348A (en) 1977-12-07
BE823075A (en) 1975-04-01
JPS5092093A (en) 1975-07-23
DE2457460A1 (en) 1975-06-12

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Legal Events

Date Code Title Description
MKEX Expiry

Effective date: 19941004