FR2254110B1 - - Google Patents

Info

Publication number
FR2254110B1
FR2254110B1 FR7440253A FR7440253A FR2254110B1 FR 2254110 B1 FR2254110 B1 FR 2254110B1 FR 7440253 A FR7440253 A FR 7440253A FR 7440253 A FR7440253 A FR 7440253A FR 2254110 B1 FR2254110 B1 FR 2254110B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7440253A
Other languages
French (fr)
Other versions
FR2254110A1 (ja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US423453A external-priority patent/US3875451A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2254110A1 publication Critical patent/FR2254110A1/fr
Application granted granted Critical
Publication of FR2254110B1 publication Critical patent/FR2254110B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7440253A 1973-12-10 1974-12-09 Expired FR2254110B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US423453A US3875451A (en) 1972-12-15 1973-12-10 Near-infrared light-emitting and light-detecting indium phosphide homodiodes including cadmium tin phosphide therein

Publications (2)

Publication Number Publication Date
FR2254110A1 FR2254110A1 (ja) 1975-07-04
FR2254110B1 true FR2254110B1 (ja) 1979-02-23

Family

ID=23678957

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7440253A Expired FR2254110B1 (ja) 1973-12-10 1974-12-09

Country Status (8)

Country Link
JP (1) JPS5092093A (ja)
BE (1) BE823075A (ja)
CA (1) CA1018642A (ja)
DE (1) DE2457460A1 (ja)
FR (1) FR2254110B1 (ja)
GB (1) GB1494348A (ja)
IT (1) IT1027038B (ja)
NL (1) NL7415996A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112201B (zh) * 2015-02-09 2020-07-28 住友电气工业株式会社 磷化铟衬底、检查磷化铟衬底的方法和制造磷化铟衬底的方法

Also Published As

Publication number Publication date
IT1027038B (it) 1978-11-20
FR2254110A1 (ja) 1975-07-04
JPS5092093A (ja) 1975-07-23
GB1494348A (en) 1977-12-07
NL7415996A (nl) 1975-06-12
BE823075A (fr) 1975-04-01
DE2457460A1 (de) 1975-06-12
CA1018642A (en) 1977-10-04

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Legal Events

Date Code Title Description
ST Notification of lapse