GB1486912A - Digital data stores - Google Patents

Digital data stores

Info

Publication number
GB1486912A
GB1486912A GB41841/74A GB4184174A GB1486912A GB 1486912 A GB1486912 A GB 1486912A GB 41841/74 A GB41841/74 A GB 41841/74A GB 4184174 A GB4184174 A GB 4184174A GB 1486912 A GB1486912 A GB 1486912A
Authority
GB
United Kingdom
Prior art keywords
digital
analogue
read
counter
signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB41841/74A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732348961 external-priority patent/DE2348961C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1486912A publication Critical patent/GB1486912A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Databases & Information Systems (AREA)
  • Analogue/Digital Conversion (AREA)
GB41841/74A 1973-09-28 1974-09-26 Digital data stores Expired GB1486912A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732348961 DE2348961C3 (de) 1973-09-28 Schaltungsanordnung zum Einspeichern und Ausspeichern von Signalen in einen bzw. aus einem Speicher, insbesondere MOS-Speicher

Publications (1)

Publication Number Publication Date
GB1486912A true GB1486912A (en) 1977-09-28

Family

ID=5894046

Family Applications (1)

Application Number Title Priority Date Filing Date
GB41841/74A Expired GB1486912A (en) 1973-09-28 1974-09-26 Digital data stores

Country Status (11)

Country Link
JP (1) JPS5062333A (xx)
AT (1) AT342342B (xx)
BE (1) BE820448A (xx)
CH (1) CH582938A5 (xx)
DK (1) DK513074A (xx)
FR (1) FR2246022B1 (xx)
GB (1) GB1486912A (xx)
IT (1) IT1022329B (xx)
LU (1) LU71005A1 (xx)
NL (1) NL7412832A (xx)
SE (1) SE402998B (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5566125A (en) * 1994-01-21 1996-10-15 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
EP1416496A1 (en) * 2002-11-04 2004-05-06 Dialog Semiconductor GmbH Multiple level ram device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524746A (en) * 1975-06-30 1977-01-14 Fujitsu Ltd Semiconductor memory device
JPS53138244A (en) * 1977-05-10 1978-12-02 Takeda Riken Ind Co Ltd Digital memory
DE3485595D1 (de) * 1983-12-23 1992-04-23 Hitachi Ltd Halbleiterspeicher mit einer speicherstruktur mit vielfachen pegeln.
JPS6163996A (ja) * 1984-09-05 1986-04-02 Nippon Telegr & Teleph Corp <Ntt> 情報記憶装置
EP0649147A1 (en) * 1993-10-11 1995-04-19 Texas Instruments France Increased capacity storage device
CN1147866C (zh) * 1994-06-02 2004-04-28 英特尔公司 含多级单元的快擦存储器的读出电路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3705391A (en) * 1971-10-22 1972-12-05 Massachusetts Inst Technology Memory system employing capacitance storage means

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5566125A (en) * 1994-01-21 1996-10-15 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5892710A (en) * 1994-01-21 1999-04-06 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US6091618A (en) * 1994-01-21 2000-07-18 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
EP1416496A1 (en) * 2002-11-04 2004-05-06 Dialog Semiconductor GmbH Multiple level ram device
US6801445B2 (en) 2002-11-04 2004-10-05 Dialog Semiconductor Gmbh Multiple level RAM device

Also Published As

Publication number Publication date
DK513074A (xx) 1975-05-12
NL7412832A (nl) 1975-04-02
SE7412226L (xx) 1975-04-01
DE2348961A1 (de) 1975-05-15
CH582938A5 (xx) 1976-12-15
FR2246022A1 (xx) 1975-04-25
SE402998B (sv) 1978-07-24
AT342342B (de) 1978-03-28
FR2246022B1 (xx) 1979-06-01
IT1022329B (it) 1978-03-20
LU71005A1 (xx) 1975-04-17
DE2348961B2 (de) 1976-08-05
JPS5062333A (xx) 1975-05-28
BE820448A (fr) 1975-03-27
ATA766674A (de) 1977-07-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee