FR2246022A1 - - Google Patents
Info
- Publication number
- FR2246022A1 FR2246022A1 FR7431491A FR7431491A FR2246022A1 FR 2246022 A1 FR2246022 A1 FR 2246022A1 FR 7431491 A FR7431491 A FR 7431491A FR 7431491 A FR7431491 A FR 7431491A FR 2246022 A1 FR2246022 A1 FR 2246022A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Databases & Information Systems (AREA)
- Analogue/Digital Conversion (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732348961 DE2348961C3 (de) | 1973-09-28 | Schaltungsanordnung zum Einspeichern und Ausspeichern von Signalen in einen bzw. aus einem Speicher, insbesondere MOS-Speicher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2246022A1 true FR2246022A1 (xx) | 1975-04-25 |
| FR2246022B1 FR2246022B1 (xx) | 1979-06-01 |
Family
ID=5894046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7431491A Expired FR2246022B1 (xx) | 1973-09-28 | 1974-09-18 |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5062333A (xx) |
| AT (1) | AT342342B (xx) |
| BE (1) | BE820448A (xx) |
| CH (1) | CH582938A5 (xx) |
| DK (1) | DK513074A (xx) |
| FR (1) | FR2246022B1 (xx) |
| GB (1) | GB1486912A (xx) |
| IT (1) | IT1022329B (xx) |
| LU (1) | LU71005A1 (xx) |
| NL (1) | NL7412832A (xx) |
| SE (1) | SE402998B (xx) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0148488A2 (en) * | 1983-12-23 | 1985-07-17 | Hitachi, Ltd. | Semiconductor memory having multiple level storage structure |
| EP0649147A1 (en) * | 1993-10-11 | 1995-04-19 | Texas Instruments France | Increased capacity storage device |
| WO1995020225A1 (en) * | 1994-01-21 | 1995-07-27 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
| US5748546A (en) * | 1994-06-02 | 1998-05-05 | Intel Corporation | Sensing scheme for flash memory with multilevel cells |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS524746A (en) * | 1975-06-30 | 1977-01-14 | Fujitsu Ltd | Semiconductor memory device |
| JPS53138244A (en) * | 1977-05-10 | 1978-12-02 | Takeda Riken Ind Co Ltd | Digital memory |
| JPS6163996A (ja) * | 1984-09-05 | 1986-04-02 | Nippon Telegr & Teleph Corp <Ntt> | 情報記憶装置 |
| EP1416496A1 (en) * | 2002-11-04 | 2004-05-06 | Dialog Semiconductor GmbH | Multiple level ram device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3705391A (en) * | 1971-10-22 | 1972-12-05 | Massachusetts Inst Technology | Memory system employing capacitance storage means |
-
1974
- 1974-09-18 FR FR7431491A patent/FR2246022B1/fr not_active Expired
- 1974-09-24 AT AT766674A patent/AT342342B/de not_active IP Right Cessation
- 1974-09-25 CH CH1296674A patent/CH582938A5/xx not_active IP Right Cessation
- 1974-09-26 LU LU71005A patent/LU71005A1/xx unknown
- 1974-09-26 IT IT27726/74A patent/IT1022329B/it active
- 1974-09-26 GB GB41841/74A patent/GB1486912A/en not_active Expired
- 1974-09-27 DK DK513074A patent/DK513074A/da unknown
- 1974-09-27 JP JP49111319A patent/JPS5062333A/ja active Pending
- 1974-09-27 NL NL7412832A patent/NL7412832A/xx not_active Application Discontinuation
- 1974-09-27 SE SE7412226A patent/SE402998B/xx unknown
- 1974-09-27 BE BE148987A patent/BE820448A/xx unknown
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0148488A2 (en) * | 1983-12-23 | 1985-07-17 | Hitachi, Ltd. | Semiconductor memory having multiple level storage structure |
| EP0148488A3 (en) * | 1983-12-23 | 1988-09-21 | Hitachi, Ltd. | Semiconductor memory having multiple level storage structure |
| EP0649147A1 (en) * | 1993-10-11 | 1995-04-19 | Texas Instruments France | Increased capacity storage device |
| WO1995020225A1 (en) * | 1994-01-21 | 1995-07-27 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
| US5566125A (en) * | 1994-01-21 | 1996-10-15 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
| US5892710A (en) * | 1994-01-21 | 1999-04-06 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
| US6091618A (en) * | 1994-01-21 | 2000-07-18 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
| US5748546A (en) * | 1994-06-02 | 1998-05-05 | Intel Corporation | Sensing scheme for flash memory with multilevel cells |
| US5828616A (en) * | 1994-06-02 | 1998-10-27 | Intel Corporation | Sensing scheme for flash memory with multilevel cells |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1486912A (en) | 1977-09-28 |
| ATA766674A (de) | 1977-07-15 |
| NL7412832A (nl) | 1975-04-02 |
| DK513074A (xx) | 1975-05-12 |
| BE820448A (fr) | 1975-03-27 |
| IT1022329B (it) | 1978-03-20 |
| LU71005A1 (xx) | 1975-04-17 |
| SE402998B (sv) | 1978-07-24 |
| AT342342B (de) | 1978-03-28 |
| JPS5062333A (xx) | 1975-05-28 |
| DE2348961B2 (de) | 1976-08-05 |
| CH582938A5 (xx) | 1976-12-15 |
| FR2246022B1 (xx) | 1979-06-01 |
| SE7412226L (xx) | 1975-04-01 |
| DE2348961A1 (de) | 1975-05-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |