CH582938A5 - - Google Patents

Info

Publication number
CH582938A5
CH582938A5 CH1296674A CH1296674A CH582938A5 CH 582938 A5 CH582938 A5 CH 582938A5 CH 1296674 A CH1296674 A CH 1296674A CH 1296674 A CH1296674 A CH 1296674A CH 582938 A5 CH582938 A5 CH 582938A5
Authority
CH
Switzerland
Application number
CH1296674A
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732348961 external-priority patent/DE2348961C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH582938A5 publication Critical patent/CH582938A5/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Databases & Information Systems (AREA)
  • Analogue/Digital Conversion (AREA)
CH1296674A 1973-09-28 1974-09-25 CH582938A5 (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732348961 DE2348961C3 (de) 1973-09-28 Schaltungsanordnung zum Einspeichern und Ausspeichern von Signalen in einen bzw. aus einem Speicher, insbesondere MOS-Speicher

Publications (1)

Publication Number Publication Date
CH582938A5 true CH582938A5 (xx) 1976-12-15

Family

ID=5894046

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1296674A CH582938A5 (xx) 1973-09-28 1974-09-25

Country Status (11)

Country Link
JP (1) JPS5062333A (xx)
AT (1) AT342342B (xx)
BE (1) BE820448A (xx)
CH (1) CH582938A5 (xx)
DK (1) DK513074A (xx)
FR (1) FR2246022B1 (xx)
GB (1) GB1486912A (xx)
IT (1) IT1022329B (xx)
LU (1) LU71005A1 (xx)
NL (1) NL7412832A (xx)
SE (1) SE402998B (xx)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524746A (en) * 1975-06-30 1977-01-14 Fujitsu Ltd Semiconductor memory device
JPS53138244A (en) * 1977-05-10 1978-12-02 Takeda Riken Ind Co Ltd Digital memory
DE3485595D1 (de) * 1983-12-23 1992-04-23 Hitachi Ltd Halbleiterspeicher mit einer speicherstruktur mit vielfachen pegeln.
JPS6163996A (ja) * 1984-09-05 1986-04-02 Nippon Telegr & Teleph Corp <Ntt> 情報記憶装置
EP0649147A1 (en) * 1993-10-11 1995-04-19 Texas Instruments France Increased capacity storage device
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
CN1147866C (zh) * 1994-06-02 2004-04-28 英特尔公司 含多级单元的快擦存储器的读出电路
EP1416496A1 (en) 2002-11-04 2004-05-06 Dialog Semiconductor GmbH Multiple level ram device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3705391A (en) * 1971-10-22 1972-12-05 Massachusetts Inst Technology Memory system employing capacitance storage means

Also Published As

Publication number Publication date
DK513074A (xx) 1975-05-12
NL7412832A (nl) 1975-04-02
SE7412226L (xx) 1975-04-01
DE2348961A1 (de) 1975-05-15
FR2246022A1 (xx) 1975-04-25
GB1486912A (en) 1977-09-28
SE402998B (sv) 1978-07-24
AT342342B (de) 1978-03-28
FR2246022B1 (xx) 1979-06-01
IT1022329B (it) 1978-03-20
LU71005A1 (xx) 1975-04-17
DE2348961B2 (de) 1976-08-05
JPS5062333A (xx) 1975-05-28
BE820448A (fr) 1975-03-27
ATA766674A (de) 1977-07-15

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Legal Events

Date Code Title Description
PL Patent ceased