GB1483647A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
GB1483647A
GB1483647A GB36405/74A GB3640574A GB1483647A GB 1483647 A GB1483647 A GB 1483647A GB 36405/74 A GB36405/74 A GB 36405/74A GB 3640574 A GB3640574 A GB 3640574A GB 1483647 A GB1483647 A GB 1483647A
Authority
GB
United Kingdom
Prior art keywords
layer
charge
transfer
section
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36405/74A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of GB1483647A publication Critical patent/GB1483647A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462Buried-channel CCD
    • H10D44/464Two-phase CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/335Channel regions of field-effect devices of charge-coupled devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
GB36405/74A 1973-09-24 1974-08-19 Charge transfer device Expired GB1483647A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40045373A 1973-09-24 1973-09-24

Publications (1)

Publication Number Publication Date
GB1483647A true GB1483647A (en) 1977-08-24

Family

ID=23583680

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36405/74A Expired GB1483647A (en) 1973-09-24 1974-08-19 Charge transfer device

Country Status (6)

Country Link
JP (1) JPS555867B2 (enrdf_load_stackoverflow)
DE (1) DE2441531A1 (enrdf_load_stackoverflow)
FR (1) FR2245088B3 (enrdf_load_stackoverflow)
GB (1) GB1483647A (enrdf_load_stackoverflow)
HK (1) HK69278A (enrdf_load_stackoverflow)
NL (1) NL7411365A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216574A (en) * 1978-06-29 1980-08-12 Raytheon Company Charge coupled device
GB2033152A (en) * 1978-10-06 1980-05-14 Hughes Aircraft Co Heterojunction charge-coupled device
JPH03227027A (ja) * 1990-01-31 1991-10-08 Matsushita Electron Corp 電荷転送装置

Also Published As

Publication number Publication date
FR2245088B3 (enrdf_load_stackoverflow) 1976-10-22
HK69278A (en) 1978-12-01
NL7411365A (nl) 1975-03-26
DE2441531A1 (de) 1975-03-27
JPS555867B2 (enrdf_load_stackoverflow) 1980-02-12
FR2245088A1 (enrdf_load_stackoverflow) 1975-04-18
JPS5057780A (enrdf_load_stackoverflow) 1975-05-20

Similar Documents

Publication Publication Date Title
US5338961A (en) High power MOSFET with low on-resistance and high breakdown voltage
US4642666A (en) High power MOSFET with low on-resistance and high breakdown voltage
US4959699A (en) High power MOSFET with low on-resistance and high breakdown voltage
GB1442464A (en) Charge-coupled devices
JP2585331B2 (ja) 高耐圧プレーナ素子
US6798016B2 (en) Trench MOS device and process for radhard device
JPH0458700B2 (enrdf_load_stackoverflow)
GB1481364A (en) Semiconductor charge coupled device structures
GB1153428A (en) Improvements in Semiconductor Devices.
GB1220306A (en) Triac structure
US5257095A (en) Common geometry high voltage tolerant long channel and high speed short channel field effect transistors
GB1483647A (en) Charge transfer device
CN211265483U (zh) 一种功率半导体器件
EP0756332A2 (en) MOS capacitor of a semiconductor device
JPS61198676A (ja) 半導体集積回路装置
ES340523A1 (es) Un dispositivo semiconductor.
EP0178030B1 (en) Charge-coupled device
GB1340350A (en) Surface controlled avalanche semiconductor device
GB1432985A (en) Charge-coupled arrangements
US5241199A (en) Charge coupled device (CCD) having high transfer efficiency at low temperature operation
SU476623A1 (ru) Прибор с зар довой св зью
SU710417A1 (ru) Устройство временной задержки электрического сигнала
JPS5583380A (en) Infrared-ray detecting cid
JPS57181276A (en) Solid-state image pickup device
JPS57199264A (en) Semiconductor memory

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee