GB1478035A - Transistor storage circuits - Google Patents

Transistor storage circuits

Info

Publication number
GB1478035A
GB1478035A GB3437874A GB3437874A GB1478035A GB 1478035 A GB1478035 A GB 1478035A GB 3437874 A GB3437874 A GB 3437874A GB 3437874 A GB3437874 A GB 3437874A GB 1478035 A GB1478035 A GB 1478035A
Authority
GB
United Kingdom
Prior art keywords
aug
technique
storage circuits
division
transistor storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3437874A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732339735 external-priority patent/DE2339735C3/de
Priority claimed from DE19732341104 external-priority patent/DE2341104A1/de
Priority claimed from DE19732358475 external-priority patent/DE2358475B2/de
Priority claimed from DE19732360897 external-priority patent/DE2360897B2/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1478035A publication Critical patent/GB1478035A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
GB3437874A 1973-08-06 1974-08-05 Transistor storage circuits Expired GB1478035A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19732339735 DE2339735C3 (de) 1973-08-06 Statisches Speicherelement mit einem Speicher-Flipflop
DE19732341104 DE2341104A1 (de) 1973-08-14 1973-08-14 Statisches speicherelement mit einem speicher-flipflop
DE19732358475 DE2358475B2 (de) 1973-11-23 1973-11-23 Komplementaer-speicherelement
DE19732360897 DE2360897B2 (de) 1973-12-06 1973-12-06 Statisches mos-speicherelement

Publications (1)

Publication Number Publication Date
GB1478035A true GB1478035A (en) 1977-06-29

Family

ID=27431723

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3437874A Expired GB1478035A (en) 1973-08-06 1974-08-05 Transistor storage circuits

Country Status (5)

Country Link
JP (1) JPS5719515B2 (enrdf_load_stackoverflow)
FR (1) FR2240500B1 (enrdf_load_stackoverflow)
GB (1) GB1478035A (enrdf_load_stackoverflow)
IT (1) IT1017853B (enrdf_load_stackoverflow)
LU (1) LU70670A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840278B2 (ja) * 1977-12-02 1983-09-05 三菱電機株式会社 メモリセル回路
JPS55108992A (en) * 1979-02-15 1980-08-21 Nec Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPS5046454A (enrdf_load_stackoverflow) 1975-04-25
LU70670A1 (enrdf_load_stackoverflow) 1974-12-10
JPS5719515B2 (enrdf_load_stackoverflow) 1982-04-22
FR2240500B1 (enrdf_load_stackoverflow) 1981-10-09
FR2240500A1 (enrdf_load_stackoverflow) 1975-03-07
IT1017853B (it) 1977-08-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee