FR2240500A1 - - Google Patents

Info

Publication number
FR2240500A1
FR2240500A1 FR7425888A FR7425888A FR2240500A1 FR 2240500 A1 FR2240500 A1 FR 2240500A1 FR 7425888 A FR7425888 A FR 7425888A FR 7425888 A FR7425888 A FR 7425888A FR 2240500 A1 FR2240500 A1 FR 2240500A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7425888A
Other languages
French (fr)
Other versions
FR2240500B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732339735 external-priority patent/DE2339735C3/de
Priority claimed from DE19732341104 external-priority patent/DE2341104A1/de
Priority claimed from DE19732358475 external-priority patent/DE2358475B2/de
Priority claimed from DE19732360897 external-priority patent/DE2360897B2/de
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of FR2240500A1 publication Critical patent/FR2240500A1/fr
Application granted granted Critical
Publication of FR2240500B1 publication Critical patent/FR2240500B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
FR7425888A 1973-08-06 1974-07-25 Expired FR2240500B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19732339735 DE2339735C3 (de) 1973-08-06 Statisches Speicherelement mit einem Speicher-Flipflop
DE19732341104 DE2341104A1 (de) 1973-08-14 1973-08-14 Statisches speicherelement mit einem speicher-flipflop
DE19732358475 DE2358475B2 (de) 1973-11-23 1973-11-23 Komplementaer-speicherelement
DE19732360897 DE2360897B2 (de) 1973-12-06 1973-12-06 Statisches mos-speicherelement

Publications (2)

Publication Number Publication Date
FR2240500A1 true FR2240500A1 (enrdf_load_stackoverflow) 1975-03-07
FR2240500B1 FR2240500B1 (enrdf_load_stackoverflow) 1981-10-09

Family

ID=27431723

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7425888A Expired FR2240500B1 (enrdf_load_stackoverflow) 1973-08-06 1974-07-25

Country Status (5)

Country Link
JP (1) JPS5719515B2 (enrdf_load_stackoverflow)
FR (1) FR2240500B1 (enrdf_load_stackoverflow)
GB (1) GB1478035A (enrdf_load_stackoverflow)
IT (1) IT1017853B (enrdf_load_stackoverflow)
LU (1) LU70670A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840278B2 (ja) * 1977-12-02 1983-09-05 三菱電機株式会社 メモリセル回路
JPS55108992A (en) * 1979-02-15 1980-08-21 Nec Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPS5719515B2 (enrdf_load_stackoverflow) 1982-04-22
JPS5046454A (enrdf_load_stackoverflow) 1975-04-25
LU70670A1 (enrdf_load_stackoverflow) 1974-12-10
GB1478035A (en) 1977-06-29
FR2240500B1 (enrdf_load_stackoverflow) 1981-10-09
IT1017853B (it) 1977-08-10

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Legal Events

Date Code Title Description
ST Notification of lapse