GB1472191A - Organic semiconductor material - Google Patents
Organic semiconductor materialInfo
- Publication number
- GB1472191A GB1472191A GB1680974A GB1680974A GB1472191A GB 1472191 A GB1472191 A GB 1472191A GB 1680974 A GB1680974 A GB 1680974A GB 1680974 A GB1680974 A GB 1680974A GB 1472191 A GB1472191 A GB 1472191A
- Authority
- GB
- United Kingdom
- Prior art keywords
- doped
- atoms
- valency
- april
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48045318A JPS49131575A (cg-RX-API-DMAC10.html) | 1973-04-20 | 1973-04-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1472191A true GB1472191A (en) | 1977-05-04 |
Family
ID=12715942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1680974A Expired GB1472191A (en) | 1973-04-20 | 1974-04-17 | Organic semiconductor material |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS49131575A (cg-RX-API-DMAC10.html) |
| CA (1) | CA1029642A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2419018C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2226209B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1472191A (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3924454A1 (de) * | 1989-07-24 | 1991-02-07 | Cornelis P Prof Dr Hollenberg | Die anwendung von dna und dna-technologie fuer die konstruktion von netzwerken zur verwendung in der chip-konstruktion und chip-produktion (dna chips) |
-
1973
- 1973-04-20 JP JP48045318A patent/JPS49131575A/ja active Pending
-
1974
- 1974-04-17 GB GB1680974A patent/GB1472191A/en not_active Expired
- 1974-04-19 CA CA197,826A patent/CA1029642A/en not_active Expired
- 1974-04-19 FR FR7413822A patent/FR2226209B1/fr not_active Expired
- 1974-04-19 DE DE2419018A patent/DE2419018C3/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3924454A1 (de) * | 1989-07-24 | 1991-02-07 | Cornelis P Prof Dr Hollenberg | Die anwendung von dna und dna-technologie fuer die konstruktion von netzwerken zur verwendung in der chip-konstruktion und chip-produktion (dna chips) |
| US5561071A (en) * | 1989-07-24 | 1996-10-01 | Hollenberg; Cornelis P. | DNA and DNA technology for the construction of networks to be used in chip construction and chip production (DNA-chips) |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS49131575A (cg-RX-API-DMAC10.html) | 1974-12-17 |
| DE2419018A1 (de) | 1974-10-24 |
| CA1029642A (en) | 1978-04-18 |
| FR2226209B1 (cg-RX-API-DMAC10.html) | 1978-10-27 |
| DE2419018C3 (de) | 1978-05-03 |
| DE2419018B2 (de) | 1977-09-22 |
| FR2226209A1 (cg-RX-API-DMAC10.html) | 1974-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB719873A (en) | Improvements in or relating to electric semi-conductor devices and processes for their production | |
| GB1253064A (cg-RX-API-DMAC10.html) | ||
| GB916889A (en) | Multiple junction semiconductor devices | |
| GB1472191A (en) | Organic semiconductor material | |
| GB886637A (en) | Improvements in or relating to voltage-dependent capacitors | |
| GB742238A (en) | Improvements in barrier layer cells | |
| BE817707A (fr) | Procede de fabrication de monocristaux de silicium a dopage homogene avec une conductivite n. | |
| US3723831A (en) | Indium antimonide infrared ray detector | |
| JPS5312289A (en) | Production of semiconductor device | |
| ARMSTRONG et al. | Bulk semiconductor limiters(Design and performance of semiconductor limiters for microwave isolation)[Semiannual Report, 1 Jul.- 31 Dec. 1972] | |
| Kolomoets et al. | Hall effect in semiconductors with two types of carrier(Hall effect in semiconductors containing two species of current carriers, p-type PbTe and GeTe, taking into account temperature dependence of energy gap) | |
| Szász | Remarks on my paper" The radical property of rings such that every homomorphic image has no nonzero left annihilators'' | |
| JPS5552219A (en) | Semiconductor wafer | |
| GB886232A (en) | Improvements relating to the formation of p-n junctions in semi-conductor material | |
| JPS5534489A (en) | Manufacture of semiconductor device | |
| GB1426511A (en) | Method for producing a semiconductor device having a very small deviation in lattice constant | |
| US3366850A (en) | P-n junction device with interstitial impurity means to increase the reverse breakdown voltage | |
| JPS5347783A (en) | Production of junction type field effect transistor | |
| Ambridge et al. | Ion implantation in gallium arsenide: Electrical characterization of a gallium arsenide layer following implantation with cadmium | |
| CHIANG et al. | Polyacetylene,(CH) sub x: n-type and P-type doping and compensation[Interim Technical Report] | |
| JPS5272165A (en) | Epitaxial growth | |
| JPS55162280A (en) | Photodiode | |
| JPS54130888A (en) | Semiconductor luminous display device | |
| Uskov et al. | Redistribution of impurities in semiconductors under the influence of a gradient field during diffusion alloying(Sb 124 dopant redistribution in Ge semiconductor during diffusion alloying with In at 750-850 C) | |
| GB2005916A (en) | Low resistivity ohmic contacts for semiconductor devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19940416 |