GB1451803A - Apapratus for deposition of semic9nductor thin layers - Google Patents

Apapratus for deposition of semic9nductor thin layers

Info

Publication number
GB1451803A
GB1451803A GB4876873A GB4876873A GB1451803A GB 1451803 A GB1451803 A GB 1451803A GB 4876873 A GB4876873 A GB 4876873A GB 4876873 A GB4876873 A GB 4876873A GB 1451803 A GB1451803 A GB 1451803A
Authority
GB
United Kingdom
Prior art keywords
substrates
members
solution
boat
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4876873A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1451803A publication Critical patent/GB1451803A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/065—Multiple stacked slider system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/064—Rotating sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

1451803 Apparatus for epitaxial growth MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 19 Oct 1973 [19 Oct 1972] 48768/73 Heading BIS In the deposition of epitaxial layers on substrates from a liquid phase an apparatus comprises a furnace with an internal refractory tube, and a boat within the tube provided with at least one axial cavity containing a solution of material to be epitaxially grown on a number of substrates, the boat comprises a number of flat members arranged on top of one another having at least one recess for the substrate, alternate members of the flat members being movable relative to the remaining members so that the solution contacts the substrates a number of times. In an embodiment shown in Fig. 3a, a refractory tube 11 contains a boat assembly 30 which comprises stationary members 70 and rotatable members 50 containing substrates 33 which can be rotated to bring the substrates 33 and solution 31 in cavity 35 in contact, rotation being by means of drive shaft 15 and rotating shaft 42 through cap members 40, doping impurity is added from chamber 23. Fig. 3b shows the same apparatus after withdrawal of the stirrer 28 and rotation of the rotatable members 50 to bring the substrates in contact with the solution. Substrates exemplified are GaP, on which n and p type layers are grown using a solution of GaP in Ga containing Le or Zn as impurities, and GaAs on which Ga Al As layers are grown using Si as an impurity.
GB4876873A 1972-10-19 1973-10-19 Apapratus for deposition of semic9nductor thin layers Expired GB1451803A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10511472A JPS5342230B2 (en) 1972-10-19 1972-10-19

Publications (1)

Publication Number Publication Date
GB1451803A true GB1451803A (en) 1976-10-06

Family

ID=14398792

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4876873A Expired GB1451803A (en) 1972-10-19 1973-10-19 Apapratus for deposition of semic9nductor thin layers

Country Status (4)

Country Link
US (1) US3854447A (en)
JP (1) JPS5342230B2 (en)
CA (1) CA1012447A (en)
GB (1) GB1451803A (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1019827A (en) * 1973-10-26 1977-10-25 Tatsuro Beppu Method of manufacturing a gallium phosphide light-emitting device
FR2251369B1 (en) * 1973-11-15 1978-02-10 Radiotechnique Compelec
JPS50110570A (en) * 1974-02-07 1975-08-30
JPS50119566A (en) * 1974-03-01 1975-09-19
JPS5129384A (en) * 1974-09-06 1976-03-12 Oki Electric Ind Co Ltd EKISOEPITAKISHARUSEICHOHO
FR2296264A1 (en) * 1974-12-24 1976-07-23 Radiotechnique Compelec PROCESS FOR REALIZING A HETEROJUNCTION SEMICONDUCTOR DEVICE
JPS51131270A (en) * 1975-05-09 1976-11-15 Matsushita Electric Ind Co Ltd Semi-conductor manufacturing unit
US4088514A (en) * 1975-04-17 1978-05-09 Matsushita Electric Industrial Co., Ltd. Method for epitaxial growth of thin semiconductor layer from solution
US4026240A (en) * 1975-11-17 1977-05-31 Hewlett-Packard Company Liquid phase epitaxial reactor apparatus
JPS5384459A (en) * 1976-12-29 1978-07-25 Fujitsu Ltd Liquid-phase epitaxial growth device
DE2730358C3 (en) * 1977-07-05 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Process for the successive deposition of monocrystalline layers on a substrate according to liquid phase shift epitaxy
US4160682A (en) * 1978-03-30 1979-07-10 Western Electric Co., Inc. Depositing materials on stacked semiconductor wafers
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
JPS55137381U (en) * 1979-03-22 1980-09-30
US4412502A (en) * 1981-06-25 1983-11-01 Western Electric Co., Inc. Apparatus for the elimination of edge growth in liquid phase epitaxy
US4390379A (en) * 1981-06-25 1983-06-28 Western Electric Company, Inc. Elimination of edge growth in liquid phase epitaxy
US4384398A (en) * 1981-10-26 1983-05-24 Bell Telephone Laboratories, Incorporated Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1600341A (en) * 1968-12-31 1970-07-20
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
US3765959A (en) * 1971-07-30 1973-10-16 Tokyo Shibaura Electric Co Method for the liquid phase epitaxial growth of semiconductor crystals
BE791927A (en) * 1971-11-29 1973-03-16 Western Electric Co DEPOSIT PROCESS BY EPITAXIAL GROWTH OF LAYERS OF SEMICONDUCTOR CRYSTALS

Also Published As

Publication number Publication date
JPS4963381A (en) 1974-06-19
JPS5342230B2 (en) 1978-11-09
DE2352605B2 (en) 1976-09-09
DE2352605A1 (en) 1974-05-09
US3854447A (en) 1974-12-17
CA1012447A (en) 1977-06-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921019