GB1451803A - Apapratus for deposition of semic9nductor thin layers - Google Patents
Apapratus for deposition of semic9nductor thin layersInfo
- Publication number
- GB1451803A GB1451803A GB4876873A GB4876873A GB1451803A GB 1451803 A GB1451803 A GB 1451803A GB 4876873 A GB4876873 A GB 4876873A GB 4876873 A GB4876873 A GB 4876873A GB 1451803 A GB1451803 A GB 1451803A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrates
- members
- solution
- boat
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/065—Multiple stacked slider system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/064—Rotating sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Abstract
1451803 Apparatus for epitaxial growth MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 19 Oct 1973 [19 Oct 1972] 48768/73 Heading BIS In the deposition of epitaxial layers on substrates from a liquid phase an apparatus comprises a furnace with an internal refractory tube, and a boat within the tube provided with at least one axial cavity containing a solution of material to be epitaxially grown on a number of substrates, the boat comprises a number of flat members arranged on top of one another having at least one recess for the substrate, alternate members of the flat members being movable relative to the remaining members so that the solution contacts the substrates a number of times. In an embodiment shown in Fig. 3a, a refractory tube 11 contains a boat assembly 30 which comprises stationary members 70 and rotatable members 50 containing substrates 33 which can be rotated to bring the substrates 33 and solution 31 in cavity 35 in contact, rotation being by means of drive shaft 15 and rotating shaft 42 through cap members 40, doping impurity is added from chamber 23. Fig. 3b shows the same apparatus after withdrawal of the stirrer 28 and rotation of the rotatable members 50 to bring the substrates in contact with the solution. Substrates exemplified are GaP, on which n and p type layers are grown using a solution of GaP in Ga containing Le or Zn as impurities, and GaAs on which Ga Al As layers are grown using Si as an impurity.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10511472A JPS5342230B2 (en) | 1972-10-19 | 1972-10-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1451803A true GB1451803A (en) | 1976-10-06 |
Family
ID=14398792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4876873A Expired GB1451803A (en) | 1972-10-19 | 1973-10-19 | Apapratus for deposition of semic9nductor thin layers |
Country Status (4)
Country | Link |
---|---|
US (1) | US3854447A (en) |
JP (1) | JPS5342230B2 (en) |
CA (1) | CA1012447A (en) |
GB (1) | GB1451803A (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1019827A (en) * | 1973-10-26 | 1977-10-25 | Tatsuro Beppu | Method of manufacturing a gallium phosphide light-emitting device |
FR2251369B1 (en) * | 1973-11-15 | 1978-02-10 | Radiotechnique Compelec | |
JPS50110570A (en) * | 1974-02-07 | 1975-08-30 | ||
JPS50119566A (en) * | 1974-03-01 | 1975-09-19 | ||
JPS5129384A (en) * | 1974-09-06 | 1976-03-12 | Oki Electric Ind Co Ltd | EKISOEPITAKISHARUSEICHOHO |
FR2296264A1 (en) * | 1974-12-24 | 1976-07-23 | Radiotechnique Compelec | PROCESS FOR REALIZING A HETEROJUNCTION SEMICONDUCTOR DEVICE |
JPS51131270A (en) * | 1975-05-09 | 1976-11-15 | Matsushita Electric Ind Co Ltd | Semi-conductor manufacturing unit |
US4088514A (en) * | 1975-04-17 | 1978-05-09 | Matsushita Electric Industrial Co., Ltd. | Method for epitaxial growth of thin semiconductor layer from solution |
US4026240A (en) * | 1975-11-17 | 1977-05-31 | Hewlett-Packard Company | Liquid phase epitaxial reactor apparatus |
JPS5384459A (en) * | 1976-12-29 | 1978-07-25 | Fujitsu Ltd | Liquid-phase epitaxial growth device |
DE2730358C3 (en) * | 1977-07-05 | 1982-03-18 | Siemens AG, 1000 Berlin und 8000 München | Process for the successive deposition of monocrystalline layers on a substrate according to liquid phase shift epitaxy |
US4160682A (en) * | 1978-03-30 | 1979-07-10 | Western Electric Co., Inc. | Depositing materials on stacked semiconductor wafers |
US4235191A (en) * | 1979-03-02 | 1980-11-25 | Western Electric Company, Inc. | Apparatus for depositing materials on stacked semiconductor wafers |
JPS55137381U (en) * | 1979-03-22 | 1980-09-30 | ||
US4412502A (en) * | 1981-06-25 | 1983-11-01 | Western Electric Co., Inc. | Apparatus for the elimination of edge growth in liquid phase epitaxy |
US4390379A (en) * | 1981-06-25 | 1983-06-28 | Western Electric Company, Inc. | Elimination of edge growth in liquid phase epitaxy |
US4384398A (en) * | 1981-10-26 | 1983-05-24 | Bell Telephone Laboratories, Incorporated | Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1600341A (en) * | 1968-12-31 | 1970-07-20 | ||
US3759759A (en) * | 1970-01-29 | 1973-09-18 | Fairchild Camera Instr Co | Push pull method for solution epitaxial growth of iii v compounds |
US3665888A (en) * | 1970-03-16 | 1972-05-30 | Bell Telephone Labor Inc | Horizontal liquid phase crystal growth apparatus |
US3765959A (en) * | 1971-07-30 | 1973-10-16 | Tokyo Shibaura Electric Co | Method for the liquid phase epitaxial growth of semiconductor crystals |
BE791927A (en) * | 1971-11-29 | 1973-03-16 | Western Electric Co | DEPOSIT PROCESS BY EPITAXIAL GROWTH OF LAYERS OF SEMICONDUCTOR CRYSTALS |
-
1972
- 1972-10-19 JP JP10511472A patent/JPS5342230B2/ja not_active Expired
-
1973
- 1973-10-18 CA CA183,673A patent/CA1012447A/en not_active Expired
- 1973-10-18 US US00407605A patent/US3854447A/en not_active Expired - Lifetime
- 1973-10-19 GB GB4876873A patent/GB1451803A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS4963381A (en) | 1974-06-19 |
JPS5342230B2 (en) | 1978-11-09 |
DE2352605B2 (en) | 1976-09-09 |
DE2352605A1 (en) | 1974-05-09 |
US3854447A (en) | 1974-12-17 |
CA1012447A (en) | 1977-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19921019 |