GB1129488A - A method of melting a rod of crystalline material zone-by-zone - Google Patents
A method of melting a rod of crystalline material zone-by-zoneInfo
- Publication number
- GB1129488A GB1129488A GB43613/67A GB4361367A GB1129488A GB 1129488 A GB1129488 A GB 1129488A GB 43613/67 A GB43613/67 A GB 43613/67A GB 4361367 A GB4361367 A GB 4361367A GB 1129488 A GB1129488 A GB 1129488A
- Authority
- GB
- United Kingdom
- Prior art keywords
- carriage
- zone
- melting
- rod
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/106—Seed pulling including sealing means details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
Abstract
1,129,488. Floating zone-melting. SIEMENS A.G. 25 Sept., 1967 [24 Sept., 1966], No. 43613/67. Addition to 1044592. Heading BIS. In the zone-melting of a rod of silicon with lateral shifting of the holder for the recrystallized material, the holder shaft passes through an opening in the zone-melting chamber and is shifted by a moving carriage in hermetic contact with the outside of the chamber around the opening, abutment members being provided to limit movement of the carriage. The shaft passes through the carriage in known hermetic manner to enable rotary and axial movement of the shaft to be effected. The other holder may be similarly shifted. The chamber and carriage may have flat engaging surfaces, one of which has an annular groove containing oil or a resilient sealing ring. Alternatively, the chamber and carriage may be separated by concentric annular resilient walls forming an annular space to which oil is fed through the carriage. The shifting may be by linear or eccentric circular movement. The diameter of the recrystallized rod may be smaller, the same, or greater than that of the rod to be recrystallized.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES106085A DE1272886B (en) | 1966-09-24 | 1966-09-24 | Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1129488A true GB1129488A (en) | 1968-10-09 |
Family
ID=7527116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB43613/67A Expired GB1129488A (en) | 1966-09-24 | 1967-09-25 | A method of melting a rod of crystalline material zone-by-zone |
Country Status (4)
Country | Link |
---|---|
US (1) | US3615245A (en) |
DE (1) | DE1272886B (en) |
GB (1) | GB1129488A (en) |
NL (1) | NL145469B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4002523A (en) * | 1973-09-12 | 1977-01-11 | Texas Instruments Incorporated | Dislocation-free growth of silicon semiconductor crystals with <110> orientation |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DK1595006T3 (en) * | 2003-02-11 | 2006-11-06 | Topsil Semiconductor Materials | Apparatus and method for making a single crystal rod |
US20070216238A1 (en) * | 2006-03-16 | 2007-09-20 | Itt Industries | Self contained pump electrical equipment power supply integrated into sealing device |
CN109727693B (en) * | 2019-01-08 | 2022-09-23 | 中国工程物理研究院核物理与化学研究所 | Connector for I-131 absorption bottle |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE664435C (en) * | 1936-09-15 | 1938-08-26 | Otto Keinath | Brassiere |
DE1061527B (en) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Process for zone-wise remelting of rods and other elongated workpieces |
US3228753A (en) * | 1962-07-27 | 1966-01-11 | Texas Instruments Inc | Orbital-spin crystal pulling |
DE1218404B (en) * | 1964-02-01 | 1966-06-08 | Siemens Ag | Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
US3359077A (en) * | 1964-05-25 | 1967-12-19 | Globe Union Inc | Method of growing a crystal |
DE1262226B (en) * | 1965-04-28 | 1968-03-07 | Siemens Ag | Device for crucible-free zone melting with a vacuum chamber |
US3370927A (en) * | 1966-02-28 | 1968-02-27 | Westinghouse Electric Corp | Method of angularly pulling continuous dendritic crystals |
-
1966
- 1966-09-24 DE DES106085A patent/DE1272886B/en not_active Withdrawn
-
1967
- 1967-08-24 NL NL676711662A patent/NL145469B/en unknown
- 1967-09-22 US US669967A patent/US3615245A/en not_active Expired - Lifetime
- 1967-09-25 GB GB43613/67A patent/GB1129488A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4002523A (en) * | 1973-09-12 | 1977-01-11 | Texas Instruments Incorporated | Dislocation-free growth of silicon semiconductor crystals with <110> orientation |
Also Published As
Publication number | Publication date |
---|---|
NL145469B (en) | 1975-04-15 |
US3615245A (en) | 1971-10-26 |
NL6711662A (en) | 1968-03-25 |
DE1272886B (en) | 1968-07-18 |
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