GB1129400A - Apparatus for melting a rod of crystalline material zone-by-zone - Google Patents

Apparatus for melting a rod of crystalline material zone-by-zone

Info

Publication number
GB1129400A
GB1129400A GB43614/67A GB4361467A GB1129400A GB 1129400 A GB1129400 A GB 1129400A GB 43614/67 A GB43614/67 A GB 43614/67A GB 4361467 A GB4361467 A GB 4361467A GB 1129400 A GB1129400 A GB 1129400A
Authority
GB
United Kingdom
Prior art keywords
side wall
zone
carriage
melting
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43614/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1129400A publication Critical patent/GB1129400A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Abstract

1,129,400. Zone-melting. SIEMENS A.G. 25 Sept., 1967 [24 Sept., 1966], No. 43614/67. Addition to 1083248. Heading B1S. In the zone-melting of a rod using a surrounding induction coil, the coil is carried by a holder which extends through a vertical slit in a side wall of the treatment chamber to enable linear movement of the holder, the space around the holder between its carriage and the side wall being hermetically sealed by an annular resilient arrangement which may be fixed or may move with the carriage. The carriage may slide by means of suitable rollers in a clamp, one side of which is formed by the side wall itself or a plate extension hermetically attached thereto. The annular resilient arrangement may comprise two channels of U-shaped cross-section opposed to form two annular openings, one in contact with the carriage and the other in contact with the side wall or plate extension, and fed with oil under pressure. The channels may be set in a recess in the side wall. The arrangement may alternatively be of C-shaped crosssection. The chamber may be evacuated or supplied with protective gas.
GB43614/67A 1966-09-24 1967-09-25 Apparatus for melting a rod of crystalline material zone-by-zone Expired GB1129400A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0106086 1966-09-24

Publications (1)

Publication Number Publication Date
GB1129400A true GB1129400A (en) 1968-10-02

Family

ID=7527117

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43614/67A Expired GB1129400A (en) 1966-09-24 1967-09-25 Apparatus for melting a rod of crystalline material zone-by-zone

Country Status (4)

Country Link
US (1) US3630684A (en)
JP (1) JPS5027443B1 (en)
DE (1) DE1519902C3 (en)
GB (1) GB1129400A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2533858C2 (en) * 1975-07-29 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Device for crucible-free zone melting of a semiconductor material rod with an induction heating coil fixed in the axial direction
JPS53122735U (en) * 1977-03-09 1978-09-29
JPS5939711A (en) * 1982-08-26 1984-03-05 Ushio Inc Method for epitaxially growing amorphous silicon or polycrystalline silicon on wafer
JPS6041036B2 (en) * 1982-08-27 1985-09-13 財団法人 半導体研究振興会 GaAs floating zone melting grass crystal production equipment
US4578144A (en) * 1983-08-25 1986-03-25 Ushio Denki Kabushiki Kaisha Method for forming a single crystal silicon layer
US4925636A (en) * 1987-12-14 1990-05-15 Grumman Aerospace Corporation Apparatus for directional solidification of a crystal material
US5069742A (en) * 1990-02-05 1991-12-03 Bleil Carl E Method and apparatus for crystal ribbon growth

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2990257A (en) * 1957-10-28 1961-06-27 Fisher Scientific Co Zone refiner
NL234451A (en) * 1957-12-27
BE581195A (en) * 1958-07-30
US3119778A (en) * 1959-01-20 1964-01-28 Clevite Corp Method and apparatus for crystal growth
DE1444530B2 (en) * 1962-12-12 1970-10-01 Siemens AG, 1000 Berlin u. 8000 München Method and device for producing rod-shaped, single-crystal semiconductor material
US3251658A (en) * 1963-02-26 1966-05-17 Monsanto Co Zone refining start-up
DE1262226B (en) * 1965-04-28 1968-03-07 Siemens Ag Device for crucible-free zone melting with a vacuum chamber

Also Published As

Publication number Publication date
JPS5027443B1 (en) 1975-09-08
DE1519902A1 (en) 1970-03-26
DE1519902C3 (en) 1975-07-10
DE1519902B2 (en) 1974-09-12
US3630684A (en) 1971-12-28

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