JPS5027443B1 - - Google Patents

Info

Publication number
JPS5027443B1
JPS5027443B1 JP48017349A JP1734973A JPS5027443B1 JP S5027443 B1 JPS5027443 B1 JP S5027443B1 JP 48017349 A JP48017349 A JP 48017349A JP 1734973 A JP1734973 A JP 1734973A JP S5027443 B1 JPS5027443 B1 JP S5027443B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48017349A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5027443B1 publication Critical patent/JPS5027443B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP48017349A 1966-09-24 1973-02-12 Pending JPS5027443B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0106086 1966-09-24

Publications (1)

Publication Number Publication Date
JPS5027443B1 true JPS5027443B1 (ja) 1975-09-08

Family

ID=7527117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48017349A Pending JPS5027443B1 (ja) 1966-09-24 1973-02-12

Country Status (4)

Country Link
US (1) US3630684A (ja)
JP (1) JPS5027443B1 (ja)
DE (1) DE1519902C3 (ja)
GB (1) GB1129400A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122735U (ja) * 1977-03-09 1978-09-29

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2533858C2 (de) * 1975-07-29 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum tiegelfreien Zonenschmelzen eines Halbleitermaterialstabes mit in axialer Richtung feststehender Induktionsheizspule
JPS5939711A (ja) * 1982-08-26 1984-03-05 Ushio Inc ウエハ−上のアモルファスシリコンもしくは多結晶シリコンをエピタキシアル成長させる方法
JPS6041036B2 (ja) * 1982-08-27 1985-09-13 財団法人 半導体研究振興会 ＧａＡｓ浮遊帯融解草結晶製造装置
US4578144A (en) * 1983-08-25 1986-03-25 Ushio Denki Kabushiki Kaisha Method for forming a single crystal silicon layer
US4925636A (en) * 1987-12-14 1990-05-15 Grumman Aerospace Corporation Apparatus for directional solidification of a crystal material
US5069742A (en) * 1990-02-05 1991-12-03 Bleil Carl E Method and apparatus for crystal ribbon growth

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2990257A (en) * 1957-10-28 1961-06-27 Fisher Scientific Co Zone refiner
NL234451A (ja) * 1957-12-27
NL240421A (ja) * 1958-07-30
US3119778A (en) * 1959-01-20 1964-01-28 Clevite Corp Method and apparatus for crystal growth
DE1444530B2 (de) * 1962-12-12 1970-10-01 Siemens AG, 1000 Berlin u. 8000 München Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen Halbleitermaterial
US3251658A (en) * 1963-02-26 1966-05-17 Monsanto Co Zone refining start-up
DE1262226B (de) * 1965-04-28 1968-03-07 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen mit einer Vakuumkammer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122735U (ja) * 1977-03-09 1978-09-29

Also Published As

Publication number Publication date
US3630684A (en) 1971-12-28
GB1129400A (en) 1968-10-02
DE1519902C3 (de) 1975-07-10
DE1519902A1 (de) 1970-03-26
DE1519902B2 (de) 1974-09-12

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