GB1436051A - Apparatus for chemically depositing epitaxial layers on semi conductor substrates - Google Patents

Apparatus for chemically depositing epitaxial layers on semi conductor substrates

Info

Publication number
GB1436051A
GB1436051A GB1135774A GB1135774A GB1436051A GB 1436051 A GB1436051 A GB 1436051A GB 1135774 A GB1135774 A GB 1135774A GB 1135774 A GB1135774 A GB 1135774A GB 1436051 A GB1436051 A GB 1436051A
Authority
GB
United Kingdom
Prior art keywords
support
reactant gas
porous wall
carrier
outer chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1135774A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HLS IND
Original Assignee
HLS IND
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HLS IND filed Critical HLS IND
Publication of GB1436051A publication Critical patent/GB1436051A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Abstract

1436051 Silicon HLS INDUSTRIES 14 March 1974 [18 Oct 1973] 11357/74 Heading C1A [Also in Division C7] Apparatus for deposition of an epitaxial layer, suitably of silicon, on a substrate, e.g. of a semi-conductor from a reactant gas, comprises an outer chamber containing an inner reaction chamber within which is a heated substrate support with a porous wall separating the chambers, means being provided both for supplying carrier and diluent gases to the outer chamber and advancing them through the porous wall towards the support and for supplying reactant gas to the reaction chamber at a location adjacent the gas exit surface of the porous wall. In Fig. 3, which is a partial plan view in section of a cylindrical apparatus, wall 70 (made of Al) defines the outer chamber 61, to which diluent and carrier gases are fed via pipes 71. Porous wall 60, e.g. of sintered stainless steel has circumferentially extending undulations and is supplied with reactant gas adjacent the points of maximum diameter. The reactant gas is supplied via pipes 73 to the distributers 63 which are vertical and either porous or perforated as at 64. Support 30 comprises a plurality of vertical graphite plates 31 having pockets 32 for subtrates and gaps 33 between them. The support may be mounted for rotation about a vertical axis but in alternative constructions may move horizontally. The heater may comprise infrared lamps located behind a cylindrical quartz tube arranged inside the support. A gas exhaust space (80) is located between heater and support and may be connected to an exhaust pump and a damper operated in response to a differential pressure sensing device. Details of seals and bearings, together with cooling arrangements are given. The carrier/diluent gases may be nitrogen/oxygen and the reactant gas silane.
GB1135774A 1973-10-18 1974-03-14 Apparatus for chemically depositing epitaxial layers on semi conductor substrates Expired GB1436051A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US407569A US3865072A (en) 1973-10-18 1973-10-18 Apparatus for chemically depositing epitaxial layers on semiconductor substrates

Publications (1)

Publication Number Publication Date
GB1436051A true GB1436051A (en) 1976-05-19

Family

ID=23612628

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1135774A Expired GB1436051A (en) 1973-10-18 1974-03-14 Apparatus for chemically depositing epitaxial layers on semi conductor substrates

Country Status (8)

Country Link
US (1) US3865072A (en)
JP (1) JPS50155172A (en)
CH (1) CH566076A5 (en)
DE (1) DE2423303A1 (en)
FR (1) FR2248610B1 (en)
GB (1) GB1436051A (en)
IT (1) IT1011349B (en)
NL (1) NL7405317A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4457661A (en) * 1981-12-07 1984-07-03 Applied Materials, Inc. Wafer loading apparatus
US4501766A (en) * 1982-02-03 1985-02-26 Tokyo Shibaura Denki Kabushiki Kaisha Film depositing apparatus and a film depositing method
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
JPS6010618A (en) * 1983-06-30 1985-01-19 Canon Inc Plasma cvd apparatus
US4597986A (en) * 1984-07-31 1986-07-01 Hughes Aircraft Company Method for photochemical vapor deposition
US4615294A (en) * 1984-07-31 1986-10-07 Hughes Aircraft Company Barrel reactor and method for photochemical vapor deposition
US4632056A (en) * 1985-08-05 1986-12-30 Stitz Robert W CVD temperature control
US4632057A (en) * 1985-08-05 1986-12-30 Spectrum Cvd, Inc. CVD plasma reactor
US4640224A (en) * 1985-08-05 1987-02-03 Spectrum Cvd, Inc. CVD heat source
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor
DE4136342A1 (en) * 1991-11-05 1993-05-06 Leybold Ag, 6450 Hanau, De DEVICE FOR HOLDING AND TRANSPORTING SUBSTRATES IN VACUUM SYSTEMS
US6096998A (en) 1996-09-17 2000-08-01 Micron Technology, Inc. Method and apparatus for performing thermal reflow operations under high gravity conditions
US5803971A (en) * 1997-01-13 1998-09-08 United Technologies Corporation Modular coating fixture
IT1297339B1 (en) * 1997-12-23 1999-09-01 Cselt Centro Studi Lab Telecom REACTOR FOR CHEMICAL DEPOSITION IN THE STEAM PHASE
IT1312150B1 (en) * 1999-03-25 2002-04-09 Lpe Spa IMPROVED REACTION CHAMBER FOR EPITAXIAL REACTOR
US20050000449A1 (en) * 2001-12-21 2005-01-06 Masayuki Ishibashi Susceptor for epitaxial growth and epitaxial growth method
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
KR100790729B1 (en) * 2006-12-11 2008-01-02 삼성전기주식회사 Chemical vapor deposition apparatus
US20080289650A1 (en) * 2007-05-24 2008-11-27 Asm America, Inc. Low-temperature cleaning of native oxide
US7871937B2 (en) 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
TW201122148A (en) * 2009-12-24 2011-07-01 Hon Hai Prec Ind Co Ltd Chemical vapor deposition device
US9029737B2 (en) * 2013-01-04 2015-05-12 Tsmc Solar Ltd. Method and system for forming absorber layer on metal coated glass for photovoltaic devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3297501A (en) * 1963-12-31 1967-01-10 Ibm Process for epitaxial growth of semiconductor single crystals
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
JPS4421778Y1 (en) * 1967-07-08 1969-09-16
BE760041A (en) * 1970-01-02 1971-05-17 Ibm GAS MASS TRANSFER METHOD AND APPARATUS
US3603284A (en) * 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
JPS5114429B2 (en) * 1971-08-31 1976-05-10

Also Published As

Publication number Publication date
IT1011349B (en) 1977-01-20
FR2248610A1 (en) 1975-05-16
CH566076A5 (en) 1975-08-29
DE2423303A1 (en) 1975-04-24
FR2248610B1 (en) 1978-02-10
US3865072A (en) 1975-02-11
NL7405317A (en) 1975-04-22
JPS50155172A (en) 1975-12-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee