GB1328838A - Vapour reaction apparatus - Google Patents
Vapour reaction apparatusInfo
- Publication number
- GB1328838A GB1328838A GB6072670A GB6072670A GB1328838A GB 1328838 A GB1328838 A GB 1328838A GB 6072670 A GB6072670 A GB 6072670A GB 6072670 A GB6072670 A GB 6072670A GB 1328838 A GB1328838 A GB 1328838A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chamber
- baffle
- gas
- whole
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
1328838 Depositing by reaction from vapour; apparatus INTERNATIONAL BUSINESS MACHINES CORP 22 Dec 1970 [2 Jan 1970] 60726/70 Heading C7F [Also in Division C1] A vapour reaction apparatus includes a tubular reaction chamber, a gas inlet distribution baffle extended across substantially the whole cross-sectional area of one end of the chamber and providing sufficient resistance to gaseous phase material to develop a substantially uniform back pressure and to deliver a substantially uniform flow of gas with a planar velocity front over substantially the whole crosssection of the chamber, and a gas exit pressure baffle extending across substantially the whole area of the other end of the chamber to provide uniform gas resistance thereover. The apparatus may be used for the reduction of silicon tetrafluoride by hydrogen. In the Figure is shown a vapour deposition reactor 10 comprising an opaque quartz cylinder 12 capped at both ends by hollow plates 14 and 16 made of stainless steel through which cooling water may be circulated and defining a reaction chamber 18. The reaction chamber may be 9 inches in diameter and 18 inches high. Tie rods 20, with the aid of O-rings 22 and 24 enable the chamber 18 to be made air-tight. The lower plates 16 and O-ring 24 are attached to a hydraulic cylinder which opens and closes the reactor. In the chamber 18 is a substrate holder, graphite susceptor 28, mounted on a fusedquartz rod 26, having mounted around its circumference and substantially parallel to the longitudinal axis of the chamber defined by rod 26 a plurality of substrates 30 upon which the deposition is desired. The susceptor may be mounted on the rod 26 by a star plate. Supported by the top plate 14 and extending the whole of the cross-section of the chamber there is provided a gaseous phase inlet means including a distribution baffle 38, which forms with the plate 14 a first plenum 36. Gaseous materials 32 are introduced through tube 34 to 36 and are evenly delivered over the whole of the crosssectional area of the reaction chamber 18. The gas distribution baffle 38 may be a perforated plate or a sintered material having a gas resistance sufficient to develop uniform back pressure to maintain even gas distribution over the entire surface area of the baffle. A heat shield 40 may be mounted on the reaction chamber outside the baffle 38 to reflect the radiation from the heat receptor 28. 40 is a thin plate of stainless steel or molybdenum. Gaseous materials having passed through the heat shield 40 enter chamber 18 having a planar velocity front. After passing over the susceptor 28 reactant gases leave the bottom of the chamber through an exit pressure baffle 42 also of sintered or porous material. Preferably, the porosity of baffle 42 is greater than that of baffle 38. Exhaust gases pass through the second plenum 48 and exhaust tubes 50 to the atmosphere or to a reclamation process. To heat the substrate an RF source is preferred although a resistance heater may be used.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34470A | 1970-01-02 | 1970-01-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1328838A true GB1328838A (en) | 1973-09-05 |
Family
ID=21691104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB6072670A Expired GB1328838A (en) | 1970-01-02 | 1970-12-22 | Vapour reaction apparatus |
Country Status (7)
Country | Link |
---|---|
US (1) | US3603284A (en) |
JP (1) | JPS4822902B1 (en) |
CA (1) | CA922502A (en) |
CH (1) | CH516342A (en) |
DE (1) | DE2049229A1 (en) |
FR (1) | FR2075031A5 (en) |
GB (1) | GB1328838A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4501766A (en) * | 1982-02-03 | 1985-02-26 | Tokyo Shibaura Denki Kabushiki Kaisha | Film depositing apparatus and a film depositing method |
GB2194966A (en) * | 1986-08-20 | 1988-03-23 | Gen Electric Plc | Deposition of films |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3865072A (en) * | 1973-10-18 | 1975-02-11 | Hls Ind | Apparatus for chemically depositing epitaxial layers on semiconductor substrates |
JPS5517018Y2 (en) * | 1974-03-20 | 1980-04-21 | ||
DE2943634C2 (en) * | 1979-10-29 | 1983-09-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Epitaxial reactor |
US4322592A (en) * | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
US4365588A (en) * | 1981-03-13 | 1982-12-28 | Rca Corporation | Fixture for VPE reactor |
US4496828A (en) * | 1983-07-08 | 1985-01-29 | Ultra Carbon Corporation | Susceptor assembly |
US4615294A (en) * | 1984-07-31 | 1986-10-07 | Hughes Aircraft Company | Barrel reactor and method for photochemical vapor deposition |
US4597986A (en) * | 1984-07-31 | 1986-07-01 | Hughes Aircraft Company | Method for photochemical vapor deposition |
US4638762A (en) * | 1985-08-30 | 1987-01-27 | At&T Technologies, Inc. | Chemical vapor deposition method and apparatus |
JPS63186875A (en) * | 1987-01-29 | 1988-08-02 | Tadahiro Omi | Surface reaction film forming device |
DE3707672A1 (en) * | 1987-03-10 | 1988-09-22 | Sitesa Sa | EPITAXY SYSTEM |
US5002011A (en) * | 1987-04-14 | 1991-03-26 | Kabushiki Kaisha Toshiba | Vapor deposition apparatus |
US4997677A (en) * | 1987-08-31 | 1991-03-05 | Massachusetts Institute Of Technology | Vapor phase reactor for making multilayer structures |
KR890008922A (en) * | 1987-11-21 | 1989-07-13 | 후세 노보루 | Heat treatment device |
DE3816788A1 (en) * | 1988-05-17 | 1989-11-23 | Siemens Ag | Epitaxy apparatus |
US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
WO1990010092A1 (en) * | 1989-02-24 | 1990-09-07 | Massachusetts Institute Of Technology | A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition |
JP2888253B2 (en) * | 1989-07-20 | 1999-05-10 | 富士通株式会社 | Chemical vapor deposition and apparatus for its implementation |
FR2670507B1 (en) * | 1990-12-18 | 1993-12-31 | Propulsion Ste Europeenne | CHEMICAL STEAM INFILTRATION PROCESS. |
US5268034A (en) * | 1991-06-25 | 1993-12-07 | Lsi Logic Corporation | Fluid dispersion head for CVD appratus |
US5286519A (en) * | 1991-06-25 | 1994-02-15 | Lsi Logic Corporation | Fluid dispersion head |
US5494522A (en) * | 1993-03-17 | 1996-02-27 | Tokyo Electron Limited | Plasma process system and method |
US5522933A (en) * | 1994-05-19 | 1996-06-04 | Geller; Anthony S. | Particle-free microchip processing |
KR100294057B1 (en) * | 1995-08-22 | 2001-09-17 | 모리시타 요이찌 | Semiconductor device comprising a silicon structure layer, method and method of manufacturing the layer and solar cell using the layer |
US6194030B1 (en) | 1999-03-18 | 2001-02-27 | International Business Machines Corporation | Chemical vapor deposition velocity control apparatus |
IT1312150B1 (en) * | 1999-03-25 | 2002-04-09 | Lpe Spa | IMPROVED REACTION CHAMBER FOR EPITAXIAL REACTOR |
TW460942B (en) * | 1999-08-31 | 2001-10-21 | Mitsubishi Material Silicon | CVD device, purging method, method for determining maintenance time for a semiconductor making device, moisture content monitoring device, and semiconductor making device with such moisture content monitoring device |
US6475284B1 (en) * | 1999-09-20 | 2002-11-05 | Moore Epitaxial, Inc. | Gas dispersion head |
US6331212B1 (en) * | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
US6660126B2 (en) * | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
KR100515052B1 (en) * | 2002-07-18 | 2005-09-14 | 삼성전자주식회사 | semiconductor manufacturing apparatus for depositing a material on semiconductor substrate |
US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US7794667B2 (en) * | 2005-10-19 | 2010-09-14 | Moore Epitaxial, Inc. | Gas ring and method of processing substrates |
US9101898B2 (en) | 2006-03-29 | 2015-08-11 | Robert M. Zubrin | Portable gas generating device |
US9441295B2 (en) * | 2010-05-14 | 2016-09-13 | Solarcity Corporation | Multi-channel gas-delivery system |
US9240513B2 (en) | 2010-05-14 | 2016-01-19 | Solarcity Corporation | Dynamic support system for quartz process chamber |
JP2012195565A (en) * | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | Substrate processing apparatus, substrate processing method, and manufacturing method of semiconductor device |
CN103628039A (en) * | 2012-08-28 | 2014-03-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | MOCVD reaction chamber and MOCVD apparatus |
CN103898473A (en) * | 2012-12-27 | 2014-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process reaction chamber and process equipment |
CN104233225B (en) * | 2013-06-17 | 2017-03-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor treating equipment with same |
CN105839074A (en) * | 2015-02-03 | 2016-08-10 | Lg电子株式会社 | Metal organic chemical vapor deposition apparatus for solar cell |
JP2017518626A (en) | 2015-02-17 | 2017-07-06 | ソーラーシティ コーポレーション | Method and system for improving manufacturing yield of solar cells |
US9972740B2 (en) | 2015-06-07 | 2018-05-15 | Tesla, Inc. | Chemical vapor deposition tool and process for fabrication of photovoltaic structures |
CN108140550B (en) * | 2015-10-08 | 2022-10-14 | 应用材料公司 | Showerhead with reduced backside plasma ignition |
US9748434B1 (en) | 2016-05-24 | 2017-08-29 | Tesla, Inc. | Systems, method and apparatus for curing conductive paste |
US9954136B2 (en) | 2016-08-03 | 2018-04-24 | Tesla, Inc. | Cassette optimized for an inline annealing system |
US10115856B2 (en) | 2016-10-31 | 2018-10-30 | Tesla, Inc. | System and method for curing conductive paste using induction heating |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2378476A (en) * | 1943-02-11 | 1945-06-19 | American Optical Corp | Coating apparatus |
US2489127A (en) * | 1947-06-14 | 1949-11-22 | Rca Corp | High capacitance target |
BE515457A (en) * | 1951-11-10 | |||
GB760328A (en) * | 1953-06-10 | 1956-10-31 | Erie Resistor Ltd | Improvements in and relating to a process and apparatus for the production of thin deposits upon a support by decomposition of a gaseous material |
NL265823A (en) * | 1960-06-13 | |||
NL6700080A (en) * | 1966-01-03 | 1967-07-04 | ||
US3397094A (en) * | 1965-03-25 | 1968-08-13 | James E. Webb | Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere |
US3424629A (en) * | 1965-12-13 | 1969-01-28 | Ibm | High capacity epitaxial apparatus and method |
US3517643A (en) * | 1968-11-25 | 1970-06-30 | Sylvania Electric Prod | Vapor deposition apparatus including diffuser means |
-
1970
- 1970-01-02 US US344A patent/US3603284A/en not_active Expired - Lifetime
- 1970-10-07 DE DE19702049229 patent/DE2049229A1/en active Pending
- 1970-12-08 FR FR7045274A patent/FR2075031A5/fr not_active Expired
- 1970-12-18 JP JP45113203A patent/JPS4822902B1/ja active Pending
- 1970-12-18 CH CH1878670A patent/CH516342A/en not_active IP Right Cessation
- 1970-12-21 CA CA101100A patent/CA922502A/en not_active Expired
- 1970-12-22 GB GB6072670A patent/GB1328838A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4501766A (en) * | 1982-02-03 | 1985-02-26 | Tokyo Shibaura Denki Kabushiki Kaisha | Film depositing apparatus and a film depositing method |
GB2194966A (en) * | 1986-08-20 | 1988-03-23 | Gen Electric Plc | Deposition of films |
Also Published As
Publication number | Publication date |
---|---|
JPS4822902B1 (en) | 1973-07-10 |
CH516342A (en) | 1971-12-15 |
FR2075031A5 (en) | 1971-10-08 |
CA922502A (en) | 1973-03-13 |
US3603284A (en) | 1971-09-07 |
DE2049229A1 (en) | 1971-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |