JPS4822902B1 - - Google Patents

Info

Publication number
JPS4822902B1
JPS4822902B1 JP45113203A JP11320370A JPS4822902B1 JP S4822902 B1 JPS4822902 B1 JP S4822902B1 JP 45113203 A JP45113203 A JP 45113203A JP 11320370 A JP11320370 A JP 11320370A JP S4822902 B1 JPS4822902 B1 JP S4822902B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45113203A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4822902B1 publication Critical patent/JPS4822902B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
JP45113203A 1970-01-02 1970-12-18 Pending JPS4822902B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34470A 1970-01-02 1970-01-02

Publications (1)

Publication Number Publication Date
JPS4822902B1 true JPS4822902B1 (en) 1973-07-10

Family

ID=21691104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45113203A Pending JPS4822902B1 (en) 1970-01-02 1970-12-18

Country Status (7)

Country Link
US (1) US3603284A (en)
JP (1) JPS4822902B1 (en)
CA (1) CA922502A (en)
CH (1) CH516342A (en)
DE (1) DE2049229A1 (en)
FR (1) FR2075031A5 (en)
GB (1) GB1328838A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5517018Y2 (en) * 1974-03-20 1980-04-21

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US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
DE2943634C2 (en) * 1979-10-29 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Epitaxial reactor
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4365588A (en) * 1981-03-13 1982-12-28 Rca Corporation Fixture for VPE reactor
US4501766A (en) * 1982-02-03 1985-02-26 Tokyo Shibaura Denki Kabushiki Kaisha Film depositing apparatus and a film depositing method
US4496828A (en) * 1983-07-08 1985-01-29 Ultra Carbon Corporation Susceptor assembly
US4597986A (en) * 1984-07-31 1986-07-01 Hughes Aircraft Company Method for photochemical vapor deposition
US4615294A (en) * 1984-07-31 1986-10-07 Hughes Aircraft Company Barrel reactor and method for photochemical vapor deposition
US4638762A (en) * 1985-08-30 1987-01-27 At&T Technologies, Inc. Chemical vapor deposition method and apparatus
GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
JPS63186875A (en) * 1987-01-29 1988-08-02 Tadahiro Omi Surface reaction film forming device
DE3707672A1 (en) * 1987-03-10 1988-09-22 Sitesa Sa EPITAXY SYSTEM
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
KR890008922A (en) * 1987-11-21 1989-07-13 후세 노보루 Heat treatment device
DE3816788A1 (en) * 1988-05-17 1989-11-23 Siemens Ag Epitaxy apparatus
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
WO1990010092A1 (en) * 1989-02-24 1990-09-07 Massachusetts Institute Of Technology A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition
JP2888253B2 (en) * 1989-07-20 1999-05-10 富士通株式会社 Chemical vapor deposition and apparatus for its implementation
FR2670507B1 (en) * 1990-12-18 1993-12-31 Propulsion Ste Europeenne CHEMICAL STEAM INFILTRATION PROCESS.
US5286519A (en) * 1991-06-25 1994-02-15 Lsi Logic Corporation Fluid dispersion head
US5268034A (en) * 1991-06-25 1993-12-07 Lsi Logic Corporation Fluid dispersion head for CVD appratus
KR100291108B1 (en) * 1993-03-17 2001-06-01 히가시 데쓰로 Plasma processing systems
US5522933A (en) * 1994-05-19 1996-06-04 Geller; Anthony S. Particle-free microchip processing
US6518494B1 (en) * 1995-08-22 2003-02-11 Matsushita Electric Industrial Co., Ltd. Silicon structure, method for producing the same, and solar battery using the silicon structure
US6194030B1 (en) 1999-03-18 2001-02-27 International Business Machines Corporation Chemical vapor deposition velocity control apparatus
IT1312150B1 (en) * 1999-03-25 2002-04-09 Lpe Spa IMPROVED REACTION CHAMBER FOR EPITAXIAL REACTOR
TW460942B (en) * 1999-08-31 2001-10-21 Mitsubishi Material Silicon CVD device, purging method, method for determining maintenance time for a semiconductor making device, moisture content monitoring device, and semiconductor making device with such moisture content monitoring device
US6475284B1 (en) * 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US6331212B1 (en) * 2000-04-17 2001-12-18 Avansys, Llc Methods and apparatus for thermally processing wafers
US6660126B2 (en) * 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
KR100515052B1 (en) * 2002-07-18 2005-09-14 삼성전자주식회사 semiconductor manufacturing apparatus for depositing a material on semiconductor substrate
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US9101898B2 (en) 2006-03-29 2015-08-11 Robert M. Zubrin Portable gas generating device
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
JP2012195565A (en) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc Substrate processing apparatus, substrate processing method, and manufacturing method of semiconductor device
CN103628039A (en) * 2012-08-28 2014-03-12 北京北方微电子基地设备工艺研究中心有限责任公司 MOCVD reaction chamber and MOCVD apparatus
CN103898473A (en) * 2012-12-27 2014-07-02 北京北方微电子基地设备工艺研究中心有限责任公司 Process reaction chamber and process equipment
CN104233225B (en) * 2013-06-17 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and semiconductor treating equipment with same
CN105839074A (en) * 2015-02-03 2016-08-10 Lg电子株式会社 Metal organic chemical vapor deposition apparatus for solar cell
JP2017518626A (en) 2015-02-17 2017-07-06 ソーラーシティ コーポレーション Method and system for improving manufacturing yield of solar cells
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
US10378108B2 (en) * 2015-10-08 2019-08-13 Applied Materials, Inc. Showerhead with reduced backside plasma ignition
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating

Family Cites Families (9)

* Cited by examiner, † Cited by third party
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US2378476A (en) * 1943-02-11 1945-06-19 American Optical Corp Coating apparatus
US2489127A (en) * 1947-06-14 1949-11-22 Rca Corp High capacitance target
NL78611C (en) * 1951-11-10
GB760328A (en) * 1953-06-10 1956-10-31 Erie Resistor Ltd Improvements in and relating to a process and apparatus for the production of thin deposits upon a support by decomposition of a gaseous material
NL265823A (en) * 1960-06-13
NL6700080A (en) * 1966-01-03 1967-07-04
US3397094A (en) * 1965-03-25 1968-08-13 James E. Webb Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5517018Y2 (en) * 1974-03-20 1980-04-21

Also Published As

Publication number Publication date
GB1328838A (en) 1973-09-05
FR2075031A5 (en) 1971-10-08
CA922502A (en) 1973-03-13
DE2049229A1 (en) 1971-07-08
US3603284A (en) 1971-09-07
CH516342A (en) 1971-12-15

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