GB1429604A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
GB1429604A
GB1429604A GB2944774A GB2944774A GB1429604A GB 1429604 A GB1429604 A GB 1429604A GB 2944774 A GB2944774 A GB 2944774A GB 2944774 A GB2944774 A GB 2944774A GB 1429604 A GB1429604 A GB 1429604A
Authority
GB
United Kingdom
Prior art keywords
substrate
source
drain
insulation
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2944774A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1429604A publication Critical patent/GB1429604A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
GB2944774A 1973-07-05 1974-07-03 Non-volatile semiconductor memory device Expired GB1429604A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48075283A JPS5024084A (OSRAM) 1973-07-05 1973-07-05

Publications (1)

Publication Number Publication Date
GB1429604A true GB1429604A (en) 1976-03-24

Family

ID=13571733

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2944774A Expired GB1429604A (en) 1973-07-05 1974-07-03 Non-volatile semiconductor memory device

Country Status (6)

Country Link
US (1) US4019198A (OSRAM)
JP (1) JPS5024084A (OSRAM)
CA (1) CA1025555A (OSRAM)
DE (1) DE2432352C3 (OSRAM)
FR (1) FR2236247B1 (OSRAM)
GB (1) GB1429604A (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4123771A (en) * 1973-09-21 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Nonvolatile semiconductor memory
JPS5532032B2 (OSRAM) * 1975-02-20 1980-08-22
JPS5222480A (en) * 1975-08-14 1977-02-19 Nippon Telegr & Teleph Corp <Ntt> Insulating gate field effect transistor
GB1540450A (en) * 1975-10-29 1979-02-14 Intel Corp Self-aligning double polycrystalline silicon etching process
FR2380639A2 (fr) * 1976-09-29 1978-09-08 Siemens Ag Transistor a effet de champ de memorisation a canal n
DE2723738C2 (de) * 1977-05-26 1984-11-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung
US4163985A (en) * 1977-09-30 1979-08-07 The United States Of America As Represented By The Secretary Of The Air Force Nonvolatile punch through memory cell with buried n+ region in channel
US4611308A (en) * 1978-06-29 1986-09-09 Westinghouse Electric Corp. Drain triggered N-channel non-volatile memory
US4353083A (en) * 1978-11-27 1982-10-05 Ncr Corporation Low voltage nonvolatile memory device
US4250206A (en) * 1978-12-11 1981-02-10 Texas Instruments Incorporated Method of making non-volatile semiconductor memory elements
JPS55500965A (OSRAM) * 1978-11-27 1980-11-13
US4429326A (en) 1978-11-29 1984-01-31 Hitachi, Ltd. I2 L Memory with nonvolatile storage
EP0021777B1 (en) * 1979-06-18 1983-10-19 Fujitsu Limited Semiconductor non-volatile memory device
DE2947350A1 (de) * 1979-11-23 1981-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie
US5016215A (en) * 1987-09-30 1991-05-14 Texas Instruments Incorporated High speed EPROM with reverse polarity voltages applied to source and drain regions during reading and writing
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
JPH05110114A (ja) * 1991-10-17 1993-04-30 Rohm Co Ltd 不揮発性半導体記憶素子

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device
GB1226080A (OSRAM) * 1967-11-28 1971-03-24
JPS4939873B1 (OSRAM) * 1969-10-15 1974-10-29
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US3756876A (en) * 1970-10-27 1973-09-04 Cogar Corp Fabrication process for field effect and bipolar transistor devices
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US3740732A (en) * 1971-08-12 1973-06-19 Texas Instruments Inc Dynamic data storage cell
JPS5139834B2 (OSRAM) * 1971-11-09 1976-10-29
US3881180A (en) * 1971-11-30 1975-04-29 Texas Instruments Inc Non-volatile memory cell
US3800411A (en) * 1972-05-22 1974-04-02 Litton Systems Inc Method of forming a stable mnos igfet
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
USB299480I5 (OSRAM) * 1972-10-20
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion

Also Published As

Publication number Publication date
DE2432352B2 (de) 1981-06-11
FR2236247A1 (OSRAM) 1975-01-31
US4019198A (en) 1977-04-19
FR2236247B1 (OSRAM) 1980-04-18
JPS5024084A (OSRAM) 1975-03-14
DE2432352A1 (de) 1975-01-30
DE2432352C3 (de) 1982-02-11
CA1025555A (en) 1978-01-31

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee