GB1414400A - Method for making a silicon electron emitter - Google Patents

Method for making a silicon electron emitter

Info

Publication number
GB1414400A
GB1414400A GB2453373A GB2453373A GB1414400A GB 1414400 A GB1414400 A GB 1414400A GB 2453373 A GB2453373 A GB 2453373A GB 2453373 A GB2453373 A GB 2453373A GB 1414400 A GB1414400 A GB 1414400A
Authority
GB
United Kingdom
Prior art keywords
heating
heated
photoemission
seconds
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2453373A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1414400A publication Critical patent/GB1414400A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

1414400 Cathode materials and processing RCA CORPORATION 23 May 1973 [2 June 1972] 24533/73 Heading H1D A negative effective electron affinity electron emitter is formed by heating a P-type Si body in vacuum at 1100-1420‹ C., applying a work function reducing material, reheating at a lower temperature and applying further said material. The method avoids cleaning Si by sputtering and subsequent annealing. A Si reflecting photocathode is prepared by mounting a P-type monocrystalline Si disc 14 in a discharge tube envelope from which extends an exhaust tube 22 including containers 26, 28 with material which releases Cs and O when heated. The envelope is degassed by baking and the disc heated by current through leads 21 to 1300‹ C. for 3 seconds. On cooling Cs is released until photoemission passes a maximum, then O 2 is released until photoemission reaches a maximum. The heating and sensitizing may be repeated. The cathode is heated to 1000‹ C. for 3 seconds and on cooling sensitized with Cs and O. These heating and sensitizing steps may be repeated until the desired photosensitivity is achieved. The Cs may be replaced by Rb. The method is used for secondary emissive dynodes and P-N cold cathodes.
GB2453373A 1972-06-02 1973-05-23 Method for making a silicon electron emitter Expired GB1414400A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00259037A US3806372A (en) 1972-06-02 1972-06-02 Method for making a negative effective-electron-affinity silicon electron emitter

Publications (1)

Publication Number Publication Date
GB1414400A true GB1414400A (en) 1975-11-19

Family

ID=22983240

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2453373A Expired GB1414400A (en) 1972-06-02 1973-05-23 Method for making a silicon electron emitter

Country Status (14)

Country Link
US (1) US3806372A (en)
JP (1) JPS551663B2 (en)
AU (1) AU468010B2 (en)
BE (1) BE800393A (en)
CA (1) CA974296A (en)
DE (1) DE2325869A1 (en)
ES (1) ES415185A1 (en)
FR (1) FR2186724B1 (en)
GB (1) GB1414400A (en)
IT (1) IT982719B (en)
MX (1) MX2985E (en)
NL (1) NL7307684A (en)
SE (1) SE378939B (en)
SU (1) SU520060A3 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU519042A1 (en) * 1974-05-21 1978-07-25 Предприятие П/Я М-5273 Photoelectronic emitter
NL8501806A (en) * 1985-06-24 1987-01-16 Philips Nv DEVICE FOR ELECTRON EMISSIONS EQUIPPED WITH A RESERVOIR WITH ELECTRON EXIT POTENTIAL REDUCING MATERIAL.
DE3752249T2 (en) * 1986-07-04 1999-07-08 Canon Kk Electron emitting device
USRE39633E1 (en) 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
US5647998A (en) * 1995-06-13 1997-07-15 Advanced Vision Technologies, Inc. Fabrication process for laminar composite lateral field-emission cathode
US5703380A (en) * 1995-06-13 1997-12-30 Advanced Vision Technologies Inc. Laminar composite lateral field-emission cathode

Also Published As

Publication number Publication date
CA974296A (en) 1975-09-09
DE2325869A1 (en) 1973-12-20
FR2186724A1 (en) 1974-01-11
AU5637173A (en) 1974-12-05
NL7307684A (en) 1973-12-04
ES415185A1 (en) 1976-02-16
AU468010B2 (en) 1975-12-18
IT982719B (en) 1974-10-21
FR2186724B1 (en) 1977-02-11
JPS551663B2 (en) 1980-01-16
SE378939B (en) 1975-09-15
JPS4951869A (en) 1974-05-20
MX2985E (en) 1980-01-23
SU520060A3 (en) 1976-06-30
BE800393A (en) 1973-10-01
US3806372A (en) 1974-04-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee