GB1410701A - Schottky barrier diode semiconductor structures - Google Patents

Schottky barrier diode semiconductor structures

Info

Publication number
GB1410701A
GB1410701A GB17873A GB17873A GB1410701A GB 1410701 A GB1410701 A GB 1410701A GB 17873 A GB17873 A GB 17873A GB 17873 A GB17873 A GB 17873A GB 1410701 A GB1410701 A GB 1410701A
Authority
GB
United Kingdom
Prior art keywords
platinum
nickel
silicon
apertures
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17873A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Publication of GB1410701A publication Critical patent/GB1410701A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5893—Mixing of deposited material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB17873A 1972-01-03 1973-01-02 Schottky barrier diode semiconductor structures Expired GB1410701A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21459072A 1972-01-03 1972-01-03

Publications (1)

Publication Number Publication Date
GB1410701A true GB1410701A (en) 1975-10-22

Family

ID=22799670

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17873A Expired GB1410701A (en) 1972-01-03 1973-01-02 Schottky barrier diode semiconductor structures

Country Status (6)

Country Link
JP (1) JPS5348075B2 (https=)
CA (1) CA965189A (https=)
FR (1) FR2167603B1 (https=)
GB (1) GB1410701A (https=)
IT (1) IT977986B (https=)
NL (1) NL160987C (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2181297A (en) * 1985-10-01 1987-04-15 Sgs Microelettronica Spa Process and apparatus for making ohmic contacts between metal and semiconductor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60234621A (ja) * 1984-05-07 1985-11-21 照井　ヨシヱ 水切り受台
JPS63257269A (ja) * 1987-04-14 1988-10-25 Fujitsu Ltd 半導体装置のコンタクト形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1808342A1 (de) * 1967-11-15 1970-04-09 Western Electric Co Verfahren zum Herstellen eines Halbleiterbauelementes
US3658489A (en) * 1968-08-09 1972-04-25 Nippon Electric Co Laminated electrode for a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2181297A (en) * 1985-10-01 1987-04-15 Sgs Microelettronica Spa Process and apparatus for making ohmic contacts between metal and semiconductor
GB2181297B (en) * 1985-10-01 1989-06-07 Sgs Microelettronica Spa Process and relative apparatus for making ohmic type contacts between metal and semiconductor

Also Published As

Publication number Publication date
NL7217827A (https=) 1973-07-05
JPS4879979A (https=) 1973-10-26
FR2167603A1 (https=) 1973-08-24
DE2264322B2 (de) 1977-02-24
NL160987B (nl) 1979-07-16
JPS5348075B2 (https=) 1978-12-26
IT977986B (it) 1974-09-20
DE2264322A1 (de) 1973-07-19
NL160987C (nl) 1979-12-17
FR2167603B1 (https=) 1977-02-04
CA965189A (en) 1975-03-25

Similar Documents

Publication Publication Date Title
US3287612A (en) Semiconductor contacts and protective coatings for planar devices
US3747203A (en) Methods of manufacturing a semiconductor device
US2861018A (en) Fabrication of semiconductive devices
US4206472A (en) Thin film structures and method for fabricating same
US3855612A (en) Schottky barrier diode semiconductor structure and method
GB1355806A (en) Methods of manufacturing a semiconductor device
US3938243A (en) Schottky barrier diode semiconductor structure and method
GB1058250A (en) Improvements in and relating to the manufacture of semiconductor devices
US3601888A (en) Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor
US3280391A (en) High frequency transistors
GB1023531A (en) Improvements in or relating to semiconductor devices
US4307132A (en) Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
GB1193868A (en) Ohmic Contacts for Semiconductor Devices
GB1410701A (en) Schottky barrier diode semiconductor structures
GB1488329A (en) Semiconductor devices
US3463971A (en) Hybrid semiconductor device including diffused-junction and schottky-barrier diodes
GB1193532A (en) Improved Electrical Contact for Semiconductor Devices.
US3271636A (en) Gallium arsenide semiconductor diode and method
US3746944A (en) Contact members for silicon semiconductor devices
GB1280199A (en) Method for producing semiconductor device utilizing ion implantation
US3523222A (en) Semiconductive contacts
GB954534A (en) Electrode contact structures and method of providing the same
JPS5691477A (en) Semiconductor
GB1215088A (en) Process for affixing thin film electrical contacts to a semiconductor body comprising silicon carbide
GB1139352A (en) Process for making ohmic contact to a semiconductor substrate

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee