GB1392142A - Production of shaped bodies of semiconductor material - Google Patents

Production of shaped bodies of semiconductor material

Info

Publication number
GB1392142A
GB1392142A GB765673A GB765673A GB1392142A GB 1392142 A GB1392142 A GB 1392142A GB 765673 A GB765673 A GB 765673A GB 765673 A GB765673 A GB 765673A GB 1392142 A GB1392142 A GB 1392142A
Authority
GB
United Kingdom
Prior art keywords
graphite
bodies
carrier
rod
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB765673A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1392142A publication Critical patent/GB1392142A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
GB765673A 1972-05-16 1973-02-16 Production of shaped bodies of semiconductor material Expired GB1392142A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722223868 DE2223868C3 (de) 1972-05-16 1972-05-16 Verfahren und Vorrichtung zum Herstellen von aus Halbleitermaterial bestehenden Hohlkörpern, insbesondere von Siliciumrohren

Publications (1)

Publication Number Publication Date
GB1392142A true GB1392142A (en) 1975-04-30

Family

ID=5845030

Family Applications (1)

Application Number Title Priority Date Filing Date
GB765673A Expired GB1392142A (en) 1972-05-16 1973-02-16 Production of shaped bodies of semiconductor material

Country Status (9)

Country Link
JP (1) JPS551700B2 (enrdf_load_stackoverflow)
BE (1) BE789719A (enrdf_load_stackoverflow)
CA (1) CA996844A (enrdf_load_stackoverflow)
CS (1) CS171283B2 (enrdf_load_stackoverflow)
DD (1) DD104029A5 (enrdf_load_stackoverflow)
DE (1) DE2223868C3 (enrdf_load_stackoverflow)
GB (1) GB1392142A (enrdf_load_stackoverflow)
IT (1) IT987169B (enrdf_load_stackoverflow)
NL (1) NL7217452A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006110481A3 (en) * 2005-04-10 2007-04-05 Rec Silicon Inc Production of polycrystalline silicon

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917016B2 (de) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München Verfahren zur herstellung von hohlkoerpern aus halbleiter material
DE2022025C3 (de) * 1970-05-05 1980-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006110481A3 (en) * 2005-04-10 2007-04-05 Rec Silicon Inc Production of polycrystalline silicon
JP2008535758A (ja) * 2005-04-10 2008-09-04 アールイーシー シリコン インコーポレイテッド 多結晶シリコンの製造

Also Published As

Publication number Publication date
DE2223868B2 (de) 1980-09-04
CA996844A (en) 1976-09-14
NL7217452A (enrdf_load_stackoverflow) 1973-11-20
DE2223868A1 (de) 1973-11-29
BE789719A (fr) 1973-02-01
JPS4950865A (enrdf_load_stackoverflow) 1974-05-17
DD104029A5 (enrdf_load_stackoverflow) 1974-02-20
DE2223868C3 (de) 1981-06-19
IT987169B (it) 1975-02-20
CS171283B2 (enrdf_load_stackoverflow) 1976-10-29
JPS551700B2 (enrdf_load_stackoverflow) 1980-01-16

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee