GB1386900A - Semiconductor layers - Google Patents

Semiconductor layers

Info

Publication number
GB1386900A
GB1386900A GB201073A GB201073A GB1386900A GB 1386900 A GB1386900 A GB 1386900A GB 201073 A GB201073 A GB 201073A GB 201073 A GB201073 A GB 201073A GB 1386900 A GB1386900 A GB 1386900A
Authority
GB
United Kingdom
Prior art keywords
sih
hydrogen halide
depositing
seed layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB201073A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1386900A publication Critical patent/GB1386900A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • H10P14/24—
    • H10P14/2921—
    • H10P14/3211—
GB201073A 1972-03-14 1973-01-15 Semiconductor layers Expired GB1386900A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2212295A DE2212295C3 (de) 1972-03-14 1972-03-14 Verfahren zur Herstellung von Silicium- oder Germanium-Epitaxialschichten

Publications (1)

Publication Number Publication Date
GB1386900A true GB1386900A (en) 1975-03-12

Family

ID=5838865

Family Applications (1)

Application Number Title Priority Date Filing Date
GB201073A Expired GB1386900A (en) 1972-03-14 1973-01-15 Semiconductor layers

Country Status (8)

Country Link
JP (1) JPS5626137B2 (enExample)
BE (1) BE796757A (enExample)
DE (1) DE2212295C3 (enExample)
FR (1) FR2175840B1 (enExample)
GB (1) GB1386900A (enExample)
IT (1) IT981333B (enExample)
LU (1) LU67197A1 (enExample)
NL (1) NL7302014A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material
WO2004086473A1 (en) * 2003-03-19 2004-10-07 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
US7045451B2 (en) 2003-04-05 2006-05-16 Rohm And Haas Electronic Materials Llc Preparation of group IVA and group VIA compounds
US7141488B2 (en) 2003-04-05 2006-11-28 Rohm And Haas Electronic Materials Llc Method of depositing germanium-containing films
US7413776B2 (en) 2003-04-05 2008-08-19 Rohm And Haas Electronic Materials Llc Method of depositing a metal-containing film

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material
US7041170B2 (en) 1999-09-20 2006-05-09 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
US7674335B2 (en) 1999-09-20 2010-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of producing high quality relaxed silicon germanium layers
US7955435B2 (en) 1999-09-20 2011-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of producing high quality relaxed silicon germanium layers
WO2004086473A1 (en) * 2003-03-19 2004-10-07 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
US7045451B2 (en) 2003-04-05 2006-05-16 Rohm And Haas Electronic Materials Llc Preparation of group IVA and group VIA compounds
US7141488B2 (en) 2003-04-05 2006-11-28 Rohm And Haas Electronic Materials Llc Method of depositing germanium-containing films
US7413776B2 (en) 2003-04-05 2008-08-19 Rohm And Haas Electronic Materials Llc Method of depositing a metal-containing film
US7767840B2 (en) 2003-04-05 2010-08-03 Rohm And Haas Electronic Materials Llc Organometallic compounds

Also Published As

Publication number Publication date
BE796757A (fr) 1973-07-02
FR2175840A1 (enExample) 1973-10-26
LU67197A1 (enExample) 1973-05-22
IT981333B (it) 1974-10-10
DE2212295B2 (de) 1974-08-15
JPS494976A (enExample) 1974-01-17
DE2212295A1 (de) 1973-09-27
DE2212295C3 (de) 1975-04-17
JPS5626137B2 (enExample) 1981-06-17
NL7302014A (enExample) 1973-09-18
FR2175840B1 (enExample) 1977-07-29

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee