GB1378420A - Phototransducers - Google Patents

Phototransducers

Info

Publication number
GB1378420A
GB1378420A GB5994972A GB5994972A GB1378420A GB 1378420 A GB1378420 A GB 1378420A GB 5994972 A GB5994972 A GB 5994972A GB 5994972 A GB5994972 A GB 5994972A GB 1378420 A GB1378420 A GB 1378420A
Authority
GB
United Kingdom
Prior art keywords
photo
bias voltage
type
insb
znse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5994972A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP47000135A external-priority patent/JPS5136078B2/ja
Priority claimed from JP47000134A external-priority patent/JPS5132514B2/ja
Priority claimed from JP47059921A external-priority patent/JPS5243591B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1378420A publication Critical patent/GB1378420A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/95Circuit arrangements
    • H10F77/953Circuit arrangements for devices having potential barriers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • H04B10/66Non-coherent receivers, e.g. using direct detection
    • H04B10/69Electrical arrangements in the receiver
    • H04B10/691Arrangements for optimizing the photodetector in the receiver
    • H04B10/6911Photodiode bias control, e.g. for compensating temperature variations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
GB5994972A 1971-12-28 1972-12-28 Phototransducers Expired GB1378420A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP47000135A JPS5136078B2 (enrdf_load_stackoverflow) 1971-12-28 1971-12-28
JP47000134A JPS5132514B2 (enrdf_load_stackoverflow) 1971-12-28 1971-12-28
JP47059921A JPS5243591B2 (enrdf_load_stackoverflow) 1972-06-14 1972-06-14

Publications (1)

Publication Number Publication Date
GB1378420A true GB1378420A (en) 1974-12-27

Family

ID=27274315

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5994972A Expired GB1378420A (en) 1971-12-28 1972-12-28 Phototransducers

Country Status (6)

Country Link
CA (1) CA998462A (enrdf_load_stackoverflow)
DE (1) DE2264000C3 (enrdf_load_stackoverflow)
FR (1) FR2169882B1 (enrdf_load_stackoverflow)
GB (1) GB1378420A (enrdf_load_stackoverflow)
IT (1) IT974270B (enrdf_load_stackoverflow)
NL (1) NL7217559A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
NL7217559A (enrdf_load_stackoverflow) 1973-07-02
DE2264000A1 (de) 1973-07-12
DE2264000B2 (de) 1978-07-06
DE2264000C3 (de) 1979-03-08
FR2169882B1 (enrdf_load_stackoverflow) 1977-04-22
CA998462A (en) 1976-10-12
IT974270B (it) 1974-06-20
FR2169882A1 (enrdf_load_stackoverflow) 1973-09-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19921226