Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/95—Circuit arrangements
  • H10F77/953—Circuit arrangements for devices having potential barriers
• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04B—TRANSMISSION
  • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
  • H04B10/60—Receivers
  • H04B10/66—Non-coherent receivers, e.g. using direct detection
  • H04B10/69—Electrical arrangements in the receiver
  • H04B10/691—Arrangements for optimizing the photodetector in the receiver
  • H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
  • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
  • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
  • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
  • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

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• Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Engineering & Computer Science (AREA)
• Computer Networks & Wireless Communication (AREA)
• Signal Processing (AREA)
• Light Receiving Elements (AREA)

Applications Claiming Priority (3)

Publications (1)

Family

ID=27274315

Family Applications (1)

Country Status (6)

• 1972
  • 1972-12-20 CA CA159,544A patent/CA998462A/en not_active Expired
  • 1972-12-22 DE DE722264000A patent/DE2264000C3/de not_active Expired
  • 1972-12-22 NL NL7217559A patent/NL7217559A/xx not_active Application Discontinuation
  • 1972-12-22 IT IT54973/72A patent/IT974270B/it active
  • 1972-12-28 FR FR7246727A patent/FR2169882B1/fr not_active Expired
  • 1972-12-28 GB GB5994972A patent/GB1378420A/en not_active Expired

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