GB1377404A - Gallium phosphide light emitting semiconductive materials and methods of preparing the same - Google Patents
Gallium phosphide light emitting semiconductive materials and methods of preparing the sameInfo
- Publication number
- GB1377404A GB1377404A GB3403472A GB3403472A GB1377404A GB 1377404 A GB1377404 A GB 1377404A GB 3403472 A GB3403472 A GB 3403472A GB 3403472 A GB3403472 A GB 3403472A GB 1377404 A GB1377404 A GB 1377404A
- Authority
- GB
- United Kingdom
- Prior art keywords
- acceptor
- complexes
- gap
- july
- filled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H10P95/00—
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16504371A | 1971-07-23 | 1971-07-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1377404A true GB1377404A (en) | 1974-12-18 |
Family
ID=22597173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3403472A Expired GB1377404A (en) | 1971-07-23 | 1972-07-20 | Gallium phosphide light emitting semiconductive materials and methods of preparing the same |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5347679B1 (enExample) |
| AU (1) | AU4488072A (enExample) |
| BE (1) | BE786585A (enExample) |
| CA (1) | CA982809A (enExample) |
| FR (1) | FR2147106B1 (enExample) |
| GB (1) | GB1377404A (enExample) |
| IT (1) | IT964738B (enExample) |
| NL (1) | NL7209935A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2158645A (en) * | 1983-05-10 | 1985-11-13 | Raytheon Co | Semiconductor manufacturing methods |
| GB2217943A (en) * | 1988-04-22 | 1989-11-01 | Nat Res Dev | Manufacture of semiconductor or superconductor devices |
-
0
- BE BE786585D patent/BE786585A/xx unknown
-
1972
- 1972-07-19 NL NL7209935A patent/NL7209935A/xx unknown
- 1972-07-20 IT IT69361/72A patent/IT964738B/it active
- 1972-07-20 GB GB3403472A patent/GB1377404A/en not_active Expired
- 1972-07-21 FR FR7226398A patent/FR2147106B1/fr not_active Expired
- 1972-07-22 JP JP7305372A patent/JPS5347679B1/ja active Pending
- 1972-07-24 AU AU44880/72A patent/AU4488072A/en not_active Expired
- 1972-07-25 CA CA147,832A patent/CA982809A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2158645A (en) * | 1983-05-10 | 1985-11-13 | Raytheon Co | Semiconductor manufacturing methods |
| GB2217943A (en) * | 1988-04-22 | 1989-11-01 | Nat Res Dev | Manufacture of semiconductor or superconductor devices |
| GB2217943B (en) * | 1988-04-22 | 1992-12-23 | Nat Res Dev | Epitaxial deposition. |
Also Published As
| Publication number | Publication date |
|---|---|
| CA982809A (en) | 1976-02-03 |
| FR2147106A1 (enExample) | 1973-03-09 |
| DE2235427A1 (de) | 1973-01-25 |
| FR2147106B1 (enExample) | 1980-04-04 |
| JPS5347679B1 (enExample) | 1978-12-22 |
| NL7209935A (enExample) | 1973-01-25 |
| BE786585A (fr) | 1973-01-22 |
| AU4488072A (en) | 1974-01-31 |
| DE2235427B2 (de) | 1977-05-12 |
| IT964738B (it) | 1974-01-31 |
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| JPH04328878A (ja) | 発光ダイオ−ド用エピタキシャルウエハの製造方法 | |
| KR790000630B1 (en) | Method of making green-light emission device for semiconductor | |
| EP0735599A3 (en) | Method for growth of a nitrogen-doped gallium phosphide epitaxial layer | |
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| JPH04328823A (ja) | 発光ダイオ−ド用エピタキシャルウエハの製造方法 | |
| JPS57183021A (en) | Liquid phase epitaxial growth of gallium phosphide | |
| JPS58194B2 (ja) | Gap ニシヨクハツコウソシノ セイゾウホウホウ | |
| JPS5479579A (en) | Manufacture of gap green light emission diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |