AU4488072A - Gallium phosphide light emitting semiconductive materials - Google Patents

Gallium phosphide light emitting semiconductive materials

Info

Publication number
AU4488072A
AU4488072A AU44880/72A AU4488072A AU4488072A AU 4488072 A AU4488072 A AU 4488072A AU 44880/72 A AU44880/72 A AU 44880/72A AU 4488072 A AU4488072 A AU 4488072A AU 4488072 A AU4488072 A AU 4488072A
Authority
AU
Australia
Prior art keywords
light emitting
gallium phosphide
semiconductive materials
phosphide light
emitting semiconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU44880/72A
Other languages
English (en)
Inventor
Rameshwar Nath Bhargava
Gertrude Fanny Neumark
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips North America LLC
US Philips Corp
Original Assignee
US Philips Corp
North American Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp, North American Philips Corp filed Critical US Philips Corp
Publication of AU4488072A publication Critical patent/AU4488072A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10P95/00—
AU44880/72A 1971-07-23 1972-07-24 Gallium phosphide light emitting semiconductive materials Expired AU4488072A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16504371A 1971-07-23 1971-07-23

Publications (1)

Publication Number Publication Date
AU4488072A true AU4488072A (en) 1974-01-31

Family

ID=22597173

Family Applications (1)

Application Number Title Priority Date Filing Date
AU44880/72A Expired AU4488072A (en) 1971-07-23 1972-07-24 Gallium phosphide light emitting semiconductive materials

Country Status (8)

Country Link
JP (1) JPS5347679B1 (enExample)
AU (1) AU4488072A (enExample)
BE (1) BE786585A (enExample)
CA (1) CA982809A (enExample)
FR (1) FR2147106B1 (enExample)
GB (1) GB1377404A (enExample)
IT (1) IT964738B (enExample)
NL (1) NL7209935A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4632710A (en) * 1983-05-10 1986-12-30 Raytheon Company Vapor phase epitaxial growth of carbon doped layers of Group III-V materials
GB8809548D0 (en) * 1988-04-22 1988-05-25 Somekh R E Epitaxial barrier layers in thin film technology

Also Published As

Publication number Publication date
CA982809A (en) 1976-02-03
FR2147106A1 (enExample) 1973-03-09
DE2235427A1 (de) 1973-01-25
FR2147106B1 (enExample) 1980-04-04
JPS5347679B1 (enExample) 1978-12-22
NL7209935A (enExample) 1973-01-25
BE786585A (fr) 1973-01-22
GB1377404A (en) 1974-12-18
DE2235427B2 (de) 1977-05-12
IT964738B (it) 1974-01-31

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