GB1369536A - Data storage cells - Google Patents

Data storage cells

Info

Publication number
GB1369536A
GB1369536A GB1753272A GB1753272A GB1369536A GB 1369536 A GB1369536 A GB 1369536A GB 1753272 A GB1753272 A GB 1753272A GB 1753272 A GB1753272 A GB 1753272A GB 1369536 A GB1369536 A GB 1369536A
Authority
GB
United Kingdom
Prior art keywords
line
stored
positive
electrode
data storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1753272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1369536A publication Critical patent/GB1369536A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
GB1753272A 1971-06-17 1972-04-17 Data storage cells Expired GB1369536A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15410471A 1971-06-17 1971-06-17

Publications (1)

Publication Number Publication Date
GB1369536A true GB1369536A (en) 1974-10-09

Family

ID=22550019

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1753272A Expired GB1369536A (en) 1971-06-17 1972-04-17 Data storage cells

Country Status (4)

Country Link
US (1) US3706891A (cg-RX-API-DMAC7.html)
DE (1) DE2223734C3 (cg-RX-API-DMAC7.html)
FR (1) FR2141937B1 (cg-RX-API-DMAC7.html)
GB (1) GB1369536A (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789501A (fr) * 1971-09-30 1973-03-29 Siemens Ag Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur
US4163242A (en) * 1972-11-13 1979-07-31 Siemens Aktiengesellschaft MOS storage integrated circuit using individual FET elements
US4070653A (en) * 1976-06-29 1978-01-24 Texas Instruments Incorporated Random access memory cell with ion implanted resistor element
US4305139A (en) * 1979-12-26 1981-12-08 International Business Machines Corporation State detection for storage cells
US4999811A (en) * 1987-11-30 1991-03-12 Texas Instruments Incorporated Trench DRAM cell with dynamic gain
US4914740A (en) * 1988-03-07 1990-04-03 International Business Corporation Charge amplifying trench memory cell
US4970689A (en) * 1988-03-07 1990-11-13 International Business Machines Corporation Charge amplifying trench memory cell
US4910709A (en) * 1988-08-10 1990-03-20 International Business Machines Corporation Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell
JP2001291389A (ja) 2000-03-31 2001-10-19 Hitachi Ltd 半導体集積回路
US20110026323A1 (en) 2009-07-30 2011-02-03 International Business Machines Corporation Gated Diode Memory Cells
US8445946B2 (en) * 2003-12-11 2013-05-21 International Business Machines Corporation Gated diode memory cells
KR101842181B1 (ko) * 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3454785A (en) * 1964-07-27 1969-07-08 Philco Ford Corp Shift register employing insulated gate field effect transistors
US3480796A (en) * 1966-12-14 1969-11-25 North American Rockwell Mos transistor driver using a control signal
US3506851A (en) * 1966-12-14 1970-04-14 North American Rockwell Field effect transistor driver using capacitor feedback
US3513365A (en) * 1968-06-24 1970-05-19 Mark W Levi Field-effect integrated circuit and method of fabrication
US3586875A (en) * 1968-09-19 1971-06-22 Electronic Arrays Dynamic shift and storage register
US3582909A (en) * 1969-03-07 1971-06-01 North American Rockwell Ratioless memory circuit using conditionally switched capacitor
US3619670A (en) * 1969-11-13 1971-11-09 North American Rockwell Elimination of high valued {37 p{38 {0 resistors from mos lsi circuits
US3593037A (en) * 1970-03-13 1971-07-13 Intel Corp Cell for mos random-acess integrated circuit memory

Also Published As

Publication number Publication date
FR2141937B1 (cg-RX-API-DMAC7.html) 1978-03-03
DE2223734B2 (de) 1980-01-10
US3706891A (en) 1972-12-19
DE2223734A1 (de) 1972-12-21
FR2141937A1 (cg-RX-API-DMAC7.html) 1973-01-26
DE2223734C3 (de) 1980-09-25

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee