GB1365724A - Methods of manufacturing single crystals of semiconductor mater ial - Google Patents

Methods of manufacturing single crystals of semiconductor mater ial

Info

Publication number
GB1365724A
GB1365724A GB4442871A GB4442871A GB1365724A GB 1365724 A GB1365724 A GB 1365724A GB 4442871 A GB4442871 A GB 4442871A GB 4442871 A GB4442871 A GB 4442871A GB 1365724 A GB1365724 A GB 1365724A
Authority
GB
United Kingdom
Prior art keywords
rod
crystal
diameter
free
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4442871A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1365724A publication Critical patent/GB1365724A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB4442871A 1970-09-26 1971-09-23 Methods of manufacturing single crystals of semiconductor mater ial Expired GB1365724A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7014206A NL7014206A (fr) 1970-09-26 1970-09-26

Publications (1)

Publication Number Publication Date
GB1365724A true GB1365724A (en) 1974-09-04

Family

ID=19811172

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4442871A Expired GB1365724A (en) 1970-09-26 1971-09-23 Methods of manufacturing single crystals of semiconductor mater ial

Country Status (8)

Country Link
AU (1) AU3387371A (fr)
BE (1) BE773097A (fr)
CA (1) CA954017A (fr)
DE (1) DE2147514A1 (fr)
FR (1) FR2112983A5 (fr)
GB (1) GB1365724A (fr)
IT (1) IT939867B (fr)
NL (1) NL7014206A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6843848B2 (en) 2000-03-24 2005-01-18 Siltronic Ag Semiconductor wafer made from silicon and method for producing the semiconductor wafer
CN103993353A (zh) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 一种使籽晶转动的籽晶夹头
CN103993352A (zh) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 一种使籽晶转动的硅芯拉制方法
CN104264220A (zh) * 2014-07-02 2015-01-07 洛阳金诺机械工程有限公司 一种用产品料直接拉制硅芯的方法
CN111624460A (zh) * 2020-06-28 2020-09-04 西安奕斯伟硅片技术有限公司 一种单晶硅缺陷分布区域的检测方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6843848B2 (en) 2000-03-24 2005-01-18 Siltronic Ag Semiconductor wafer made from silicon and method for producing the semiconductor wafer
CN103993353A (zh) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 一种使籽晶转动的籽晶夹头
CN103993352A (zh) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 一种使籽晶转动的硅芯拉制方法
CN103993353B (zh) * 2014-04-18 2019-07-23 洛阳金诺机械工程有限公司 一种使籽晶转动的籽晶夹头
CN104264220A (zh) * 2014-07-02 2015-01-07 洛阳金诺机械工程有限公司 一种用产品料直接拉制硅芯的方法
CN111624460A (zh) * 2020-06-28 2020-09-04 西安奕斯伟硅片技术有限公司 一种单晶硅缺陷分布区域的检测方法
CN111624460B (zh) * 2020-06-28 2022-10-21 西安奕斯伟材料科技有限公司 一种单晶硅缺陷分布区域的检测方法

Also Published As

Publication number Publication date
FR2112983A5 (fr) 1972-06-23
NL7014206A (fr) 1972-03-28
BE773097A (fr) 1972-03-24
AU3387371A (en) 1973-03-29
DE2147514A1 (de) 1972-03-30
IT939867B (it) 1973-02-10
CA954017A (en) 1974-09-03

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees