GB1355489A - Semiconductor switch device and method of making same - Google Patents
Semiconductor switch device and method of making sameInfo
- Publication number
- GB1355489A GB1355489A GB2963872A GB2963872A GB1355489A GB 1355489 A GB1355489 A GB 1355489A GB 2963872 A GB2963872 A GB 2963872A GB 2963872 A GB2963872 A GB 2963872A GB 1355489 A GB1355489 A GB 1355489A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- layers
- exposed
- emitter
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000001771 vacuum deposition Methods 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4595871A JPS5310839B1 (enrdf_load_stackoverflow) | 1971-06-24 | 1971-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1355489A true GB1355489A (en) | 1974-06-05 |
Family
ID=12733758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2963872A Expired GB1355489A (en) | 1971-06-24 | 1972-06-23 | Semiconductor switch device and method of making same |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5310839B1 (enrdf_load_stackoverflow) |
| CA (1) | CA959176A (enrdf_load_stackoverflow) |
| CH (1) | CH546484A (enrdf_load_stackoverflow) |
| DE (1) | DE2230635C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2143430B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1355489A (enrdf_load_stackoverflow) |
| IT (1) | IT956814B (enrdf_load_stackoverflow) |
| SE (1) | SE378726B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3220564C2 (de) * | 1982-06-01 | 1985-08-14 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor |
| DE3917769A1 (de) * | 1989-05-31 | 1990-12-06 | Siemens Ag | Thyristor mit emitter-nebenschluessen |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS438333Y1 (enrdf_load_stackoverflow) * | 1967-05-02 | 1968-04-13 |
-
1971
- 1971-06-24 JP JP4595871A patent/JPS5310839B1/ja active Pending
-
1972
- 1972-06-22 DE DE2230635A patent/DE2230635C3/de not_active Expired
- 1972-06-22 SE SE7208307A patent/SE378726B/xx unknown
- 1972-06-23 CH CH958072A patent/CH546484A/xx not_active IP Right Cessation
- 1972-06-23 FR FR7222889A patent/FR2143430B1/fr not_active Expired
- 1972-06-23 IT IT26131/72A patent/IT956814B/it active
- 1972-06-23 GB GB2963872A patent/GB1355489A/en not_active Expired
- 1972-06-23 CA CA145,555A patent/CA959176A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT956814B (it) | 1973-10-10 |
| DE2230635C3 (de) | 1980-01-24 |
| CA959176A (en) | 1974-12-10 |
| JPS5310839B1 (enrdf_load_stackoverflow) | 1978-04-17 |
| DE2230635A1 (de) | 1972-12-28 |
| SE378726B (enrdf_load_stackoverflow) | 1975-09-08 |
| FR2143430B1 (enrdf_load_stackoverflow) | 1977-12-23 |
| FR2143430A1 (enrdf_load_stackoverflow) | 1973-02-02 |
| CH546484A (de) | 1974-02-28 |
| DE2230635B2 (de) | 1979-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4607270A (en) | Schottky barrier diode with guard ring | |
| US3617824A (en) | Mos device with a metal-silicide gate | |
| US3619738A (en) | Semiconductor device with improved connection to control electrode region | |
| US3907617A (en) | Manufacture of a high voltage Schottky barrier device | |
| GB721671A (en) | Signal translating devices utilizing semiconductive bodies and methods of making them | |
| GB1330490A (en) | Semiconductor controlled rectifier switching devices | |
| US3443171A (en) | Symmetrical switching controlled rectifier with non-overlapped emitters | |
| US3409812A (en) | Space-charge-limited current triode device | |
| US3054034A (en) | Semiconductor devices and method of manufacture thereof | |
| US4047219A (en) | Radiation sensitive thyristor structure with isolated detector | |
| US4066483A (en) | Gate-controlled bidirectional switching device | |
| KR890011026A (ko) | 반도체 소자 제조방법 | |
| US3696273A (en) | Bilateral, gate-controlled semiconductor devices | |
| US3909837A (en) | High-speed transistor with rectifying contact connected between base and collector | |
| US3975758A (en) | Gate assist turn-off, amplifying gate thyristor and a package assembly therefor | |
| EP0064613B1 (en) | Semiconductor device having a plurality of element units operable in parallel | |
| US3210563A (en) | Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain | |
| US3254276A (en) | Solid-state translating device with barrier-layers formed by thin metal and semiconductor material | |
| US4054893A (en) | Semiconductor switching devices utilizing nonohmic current paths across P-N junctions | |
| GB1355489A (en) | Semiconductor switch device and method of making same | |
| JPS55102267A (en) | Semiconductor control element | |
| US4801987A (en) | Junction type field effect transistor with metallized oxide film | |
| JPS5912026B2 (ja) | サイリスタ | |
| US4053922A (en) | Light triggered thyristor having controlled turn on delay | |
| US4063278A (en) | Semiconductor switch having sensitive gate characteristics at high temperatures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |