DE2230635C3 - Thyristor und Verfahren zu dessen Herstellung - Google Patents
Thyristor und Verfahren zu dessen HerstellungInfo
- Publication number
- DE2230635C3 DE2230635C3 DE2230635A DE2230635A DE2230635C3 DE 2230635 C3 DE2230635 C3 DE 2230635C3 DE 2230635 A DE2230635 A DE 2230635A DE 2230635 A DE2230635 A DE 2230635A DE 2230635 C3 DE2230635 C3 DE 2230635C3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- end layer
- exposed
- main surface
- adjacent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000008569 process Effects 0.000 title description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 47
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 12
- 239000011733 molybdenum Substances 0.000 description 12
- 239000002800 charge carrier Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4595871A JPS5310839B1 (enrdf_load_stackoverflow) | 1971-06-24 | 1971-06-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2230635A1 DE2230635A1 (de) | 1972-12-28 |
| DE2230635B2 DE2230635B2 (de) | 1979-05-10 |
| DE2230635C3 true DE2230635C3 (de) | 1980-01-24 |
Family
ID=12733758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2230635A Expired DE2230635C3 (de) | 1971-06-24 | 1972-06-22 | Thyristor und Verfahren zu dessen Herstellung |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5310839B1 (enrdf_load_stackoverflow) |
| CA (1) | CA959176A (enrdf_load_stackoverflow) |
| CH (1) | CH546484A (enrdf_load_stackoverflow) |
| DE (1) | DE2230635C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2143430B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1355489A (enrdf_load_stackoverflow) |
| IT (1) | IT956814B (enrdf_load_stackoverflow) |
| SE (1) | SE378726B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3220564C2 (de) * | 1982-06-01 | 1985-08-14 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor |
| DE3917769A1 (de) * | 1989-05-31 | 1990-12-06 | Siemens Ag | Thyristor mit emitter-nebenschluessen |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS438333Y1 (enrdf_load_stackoverflow) * | 1967-05-02 | 1968-04-13 |
-
1971
- 1971-06-24 JP JP4595871A patent/JPS5310839B1/ja active Pending
-
1972
- 1972-06-22 DE DE2230635A patent/DE2230635C3/de not_active Expired
- 1972-06-22 SE SE7208307A patent/SE378726B/xx unknown
- 1972-06-23 CH CH958072A patent/CH546484A/xx not_active IP Right Cessation
- 1972-06-23 FR FR7222889A patent/FR2143430B1/fr not_active Expired
- 1972-06-23 IT IT26131/72A patent/IT956814B/it active
- 1972-06-23 GB GB2963872A patent/GB1355489A/en not_active Expired
- 1972-06-23 CA CA145,555A patent/CA959176A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT956814B (it) | 1973-10-10 |
| CA959176A (en) | 1974-12-10 |
| JPS5310839B1 (enrdf_load_stackoverflow) | 1978-04-17 |
| DE2230635A1 (de) | 1972-12-28 |
| GB1355489A (en) | 1974-06-05 |
| SE378726B (enrdf_load_stackoverflow) | 1975-09-08 |
| FR2143430B1 (enrdf_load_stackoverflow) | 1977-12-23 |
| FR2143430A1 (enrdf_load_stackoverflow) | 1973-02-02 |
| CH546484A (de) | 1974-02-28 |
| DE2230635B2 (de) | 1979-05-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) |