GB1353485A - Multiple layer crystal structures - Google Patents

Multiple layer crystal structures

Info

Publication number
GB1353485A
GB1353485A GB2297571A GB2297571A GB1353485A GB 1353485 A GB1353485 A GB 1353485A GB 2297571 A GB2297571 A GB 2297571A GB 2297571 A GB2297571 A GB 2297571A GB 1353485 A GB1353485 A GB 1353485A
Authority
GB
United Kingdom
Prior art keywords
monocrystalline
deposited
films
substrate
multiple layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2297571A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of GB1353485A publication Critical patent/GB1353485A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/22—Orthoferrites, e.g. RFeO3 (R= rare earth element) with orthorhombic structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/404—Oxides of alkaline earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/265—Magnetic multilayers non exchange-coupled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB2297571A 1970-03-04 1971-04-19 Multiple layer crystal structures Expired GB1353485A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1644670A 1970-03-04 1970-03-04
US1644770A 1970-03-04 1970-03-04

Publications (1)

Publication Number Publication Date
GB1353485A true GB1353485A (en) 1974-05-15

Family

ID=26688607

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2297571A Expired GB1353485A (en) 1970-03-04 1971-04-19 Multiple layer crystal structures

Country Status (7)

Country Link
US (1) US3645788A (de)
JP (1) JPS536358B1 (de)
CA (1) CA939237A (de)
DE (1) DE2063211C3 (de)
FR (1) FR2081691B1 (de)
GB (1) GB1353485A (de)
NL (1) NL7018848A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837911A (en) * 1971-04-12 1974-09-24 Bell Telephone Labor Inc Magnetic devices utilizing garnet epitaxial materials and method of production
US3932688A (en) * 1973-10-12 1976-01-13 Hitachi, Ltd. Composite magnetic film
US4101707A (en) * 1977-04-04 1978-07-18 Rockwell International Corporation Homogeneous multilayer dielectric mirror and method of making same
US5225031A (en) * 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
US5482003A (en) * 1991-04-10 1996-01-09 Martin Marietta Energy Systems, Inc. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL225323A (de) * 1957-02-28
US3079240A (en) * 1960-05-13 1963-02-26 Bell Telephone Labor Inc Process of growing single crystals
US3332796A (en) * 1961-06-26 1967-07-25 Philips Corp Preparing nickel ferrite single crystals on a monocrystalline substrate
US3511702A (en) * 1965-08-20 1970-05-12 Motorola Inc Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen
US3429740A (en) * 1965-09-24 1969-02-25 North American Rockwell Growing garnet on non-garnet single crystal
US3460116A (en) * 1966-09-16 1969-08-05 Bell Telephone Labor Inc Magnetic domain propagation circuit
US3421933A (en) * 1966-12-14 1969-01-14 North American Rockwell Spinel ferrite epitaxial composite

Also Published As

Publication number Publication date
DE2063211C3 (de) 1979-05-17
CA939237A (en) 1974-01-01
NL7018848A (de) 1971-09-07
DE2063211A1 (de) 1971-09-23
FR2081691B1 (de) 1975-01-17
JPS536358B1 (de) 1978-03-07
US3645788A (en) 1972-02-29
FR2081691A1 (de) 1971-12-10
DE2063211B2 (de) 1978-09-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee