JPS536358B1 - - Google Patents
Info
- Publication number
- JPS536358B1 JPS536358B1 JP256871A JP256871A JPS536358B1 JP S536358 B1 JPS536358 B1 JP S536358B1 JP 256871 A JP256871 A JP 256871A JP 256871 A JP256871 A JP 256871A JP S536358 B1 JPS536358 B1 JP S536358B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/22—Orthoferrites, e.g. RFeO3 (R= rare earth element) with orthorhombic structure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/404—Oxides of alkaline earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/265—Magnetic multilayers non exchange-coupled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1644770A | 1970-03-04 | 1970-03-04 | |
US1644670A | 1970-03-04 | 1970-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS536358B1 true JPS536358B1 (de) | 1978-03-07 |
Family
ID=26688607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP256871A Pending JPS536358B1 (de) | 1970-03-04 | 1971-01-26 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3645788A (de) |
JP (1) | JPS536358B1 (de) |
CA (1) | CA939237A (de) |
DE (1) | DE2063211C3 (de) |
FR (1) | FR2081691B1 (de) |
GB (1) | GB1353485A (de) |
NL (1) | NL7018848A (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3837911A (en) * | 1971-04-12 | 1974-09-24 | Bell Telephone Labor Inc | Magnetic devices utilizing garnet epitaxial materials and method of production |
US3932688A (en) * | 1973-10-12 | 1976-01-13 | Hitachi, Ltd. | Composite magnetic film |
US4101707A (en) * | 1977-04-04 | 1978-07-18 | Rockwell International Corporation | Homogeneous multilayer dielectric mirror and method of making same |
US5225031A (en) * | 1991-04-10 | 1993-07-06 | Martin Marietta Energy Systems, Inc. | Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process |
US5482003A (en) * | 1991-04-10 | 1996-01-09 | Martin Marietta Energy Systems, Inc. | Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL225323A (de) * | 1957-02-28 | |||
US3079240A (en) * | 1960-05-13 | 1963-02-26 | Bell Telephone Labor Inc | Process of growing single crystals |
US3332796A (en) * | 1961-06-26 | 1967-07-25 | Philips Corp | Preparing nickel ferrite single crystals on a monocrystalline substrate |
US3511702A (en) * | 1965-08-20 | 1970-05-12 | Motorola Inc | Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen |
US3429740A (en) * | 1965-09-24 | 1969-02-25 | North American Rockwell | Growing garnet on non-garnet single crystal |
US3460116A (en) * | 1966-09-16 | 1969-08-05 | Bell Telephone Labor Inc | Magnetic domain propagation circuit |
US3421933A (en) * | 1966-12-14 | 1969-01-14 | North American Rockwell | Spinel ferrite epitaxial composite |
-
1970
- 1970-03-04 US US16446A patent/US3645788A/en not_active Expired - Lifetime
- 1970-11-19 CA CA098,554A patent/CA939237A/en not_active Expired
- 1970-12-22 DE DE2063211A patent/DE2063211C3/de not_active Expired
- 1970-12-28 NL NL7018848A patent/NL7018848A/xx unknown
-
1971
- 1971-01-26 JP JP256871A patent/JPS536358B1/ja active Pending
- 1971-03-03 FR FR7107311A patent/FR2081691B1/fr not_active Expired
- 1971-04-19 GB GB2297571A patent/GB1353485A/en not_active Expired
Non-Patent Citations (3)
Title |
---|
JOURNAL OF APPLIED PHYSICS=1958 * |
JOURNAL OF CRYSTAL GROWTH=1968US * |
PHYSICAL REVIEW=1966 * |
Also Published As
Publication number | Publication date |
---|---|
FR2081691B1 (de) | 1975-01-17 |
GB1353485A (en) | 1974-05-15 |
DE2063211B2 (de) | 1978-09-21 |
NL7018848A (de) | 1971-09-07 |
CA939237A (en) | 1974-01-01 |
FR2081691A1 (de) | 1971-12-10 |
DE2063211A1 (de) | 1971-09-23 |
DE2063211C3 (de) | 1979-05-17 |
US3645788A (en) | 1972-02-29 |