GB1351617A - Photo-electrical transducer - Google Patents

Photo-electrical transducer

Info

Publication number
GB1351617A
GB1351617A GB1087271*[A GB1087271A GB1351617A GB 1351617 A GB1351617 A GB 1351617A GB 1087271 A GB1087271 A GB 1087271A GB 1351617 A GB1351617 A GB 1351617A
Authority
GB
United Kingdom
Prior art keywords
photo
oxide
april
vicinity
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1087271*[A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1351617A publication Critical patent/GB1351617A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
GB1087271*[A 1970-04-24 1971-04-22 Photo-electrical transducer Expired GB1351617A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45035757A JPS4919957B1 (https=) 1970-04-24 1970-04-24

Publications (1)

Publication Number Publication Date
GB1351617A true GB1351617A (en) 1974-05-01

Family

ID=12450694

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1087271*[A Expired GB1351617A (en) 1970-04-24 1971-04-22 Photo-electrical transducer

Country Status (7)

Country Link
US (1) US3928865A (https=)
JP (1) JPS4919957B1 (https=)
CA (1) CA929258A (https=)
DE (1) DE2120031A1 (https=)
FR (1) FR2086311B1 (https=)
GB (1) GB1351617A (https=)
NL (1) NL155987B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149907A (en) * 1977-07-07 1979-04-17 Rca Corporation Method of making camera tube target by modifying Schottky barrier heights
US4408216A (en) * 1978-06-02 1983-10-04 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4490709A (en) * 1982-12-06 1984-12-25 The United States Of America As Represented By The United States Department Of Energy InP:Fe Photoconducting device
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417248A (en) * 1962-03-27 1968-12-17 Gen Electric Tunneling semiconductor device exhibiting storage characteristics
US3271637A (en) * 1963-07-22 1966-09-06 Nasa Gaas solar detector using manganese as a doping agent
US3390311A (en) * 1964-09-14 1968-06-25 Gen Electric Seleno-telluride p-nu junction device utilizing deep trapping states
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
US3461356A (en) * 1965-08-19 1969-08-12 Matsushita Electric Industrial Co Ltd Negative resistance semiconductor device having an intrinsic region
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector

Also Published As

Publication number Publication date
NL155987B (nl) 1978-02-15
JPS4919957B1 (https=) 1974-05-21
FR2086311A1 (https=) 1971-12-31
CA929258A (en) 1973-06-26
DE2120031B2 (https=) 1972-10-26
DE2120031A1 (de) 1971-11-11
NL7105541A (https=) 1971-10-26
FR2086311B1 (https=) 1976-04-16
US3928865A (en) 1975-12-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee