GB1334307A - Monolithic memory system - Google Patents

Monolithic memory system

Info

Publication number
GB1334307A
GB1334307A GB3866171A GB3866171A GB1334307A GB 1334307 A GB1334307 A GB 1334307A GB 3866171 A GB3866171 A GB 3866171A GB 3866171 A GB3866171 A GB 3866171A GB 1334307 A GB1334307 A GB 1334307A
Authority
GB
United Kingdom
Prior art keywords
row
chip
outputs
signals
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3866171A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1334307A publication Critical patent/GB1334307A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
GB3866171A 1970-09-22 1971-08-18 Monolithic memory system Expired GB1334307A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7443270A 1970-09-22 1970-09-22

Publications (1)

Publication Number Publication Date
GB1334307A true GB1334307A (en) 1973-10-17

Family

ID=22119533

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3866171A Expired GB1334307A (en) 1970-09-22 1971-08-18 Monolithic memory system

Country Status (11)

Country Link
US (1) US3688280A (enExample)
JP (1) JPS521829B1 (enExample)
BE (1) BE771198A (enExample)
CA (1) CA956034A (enExample)
CH (1) CH536014A (enExample)
DE (1) DE2146905C3 (enExample)
ES (1) ES395249A1 (enExample)
FR (1) FR2107851B1 (enExample)
GB (1) GB1334307A (enExample)
NL (1) NL178368C (enExample)
SE (1) SE379255B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3750116A (en) * 1972-06-30 1973-07-31 Ibm Half good chip with low power dissipation
US3855577A (en) * 1973-06-11 1974-12-17 Texas Instruments Inc Power saving circuit for calculator system
US3969708A (en) * 1975-06-30 1976-07-13 International Business Machines Corporation Static four device memory cell
DE2713648A1 (de) * 1976-03-26 1977-10-06 Tokyo Shibaura Electric Co Stromzufuhr-steuervorrichtung fuer speichervorrichtungen
US4095265A (en) * 1976-06-07 1978-06-13 International Business Machines Corporation Memory control structure for a pipelined mini-processor system
US4174541A (en) * 1976-12-01 1979-11-13 Raytheon Company Bipolar monolithic integrated circuit memory with standby power enable
FR2443118A1 (fr) * 1978-11-30 1980-06-27 Ibm France Dispositif pour l'alimentation des memoires monolithiques
US4422162A (en) * 1980-10-01 1983-12-20 Motorola, Inc. Non-dissipative memory system
US4413191A (en) * 1981-05-05 1983-11-01 International Business Machines Corporation Array word line driver system
US4445205A (en) * 1981-12-28 1984-04-24 National Semiconductor Corporation Semiconductor memory core programming circuit
JPS59124092A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd メモリ装置
JPH03231320A (ja) * 1990-02-06 1991-10-15 Mitsubishi Electric Corp マイクロコンピュータシステム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3292008A (en) * 1963-12-03 1966-12-13 Rca Corp Switching circuit having low standby power dissipation
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
DE1524873B2 (de) * 1967-10-05 1970-12-23 Ibm Deutschland Monolithische integrierte Speicherzelle mit kleiner Ruheleistung
US3618046A (en) * 1970-03-09 1971-11-02 Cogar Corp Bilevel semiconductor memory circuit with high-speed word driver

Also Published As

Publication number Publication date
BE771198A (fr) 1971-12-16
DE2146905B2 (de) 1974-06-27
SE379255B (enExample) 1975-09-29
AU3279071A (en) 1973-03-01
CA956034A (en) 1974-10-08
NL178368B (nl) 1985-10-01
JPS521829B1 (enExample) 1977-01-18
ES395249A1 (es) 1973-11-16
FR2107851A1 (enExample) 1972-05-12
FR2107851B1 (enExample) 1974-05-31
DE2146905C3 (de) 1975-02-13
DE2146905A1 (de) 1972-04-27
NL178368C (nl) 1986-03-03
NL7111999A (enExample) 1972-03-24
CH536014A (de) 1973-04-15
US3688280A (en) 1972-08-29

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee