GB1332464A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1332464A
GB1332464A GB5865470A GB5865470A GB1332464A GB 1332464 A GB1332464 A GB 1332464A GB 5865470 A GB5865470 A GB 5865470A GB 5865470 A GB5865470 A GB 5865470A GB 1332464 A GB1332464 A GB 1332464A
Authority
GB
United Kingdom
Prior art keywords
substrate
pattern
dec
degrees
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5865470A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1332464A publication Critical patent/GB1332464A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

1332464 Epitaxial coating layers INTERNATIONAL BUSINESS MACHINES CORP 10 Dec 1970 [29 Dec 1969] 58654/70 Heading C7F [Also in Division C1] An epitaxial layer is grown on a monocrystallize substrate e.g. silicon, germanium on a face which is at angle of 0À5 degrees to 5 degrees to the (100) plane of the substrate in order to reduce pattern washout. The substrate 10 may be provided with one or more diffused regions 19 which form a pattern on the surface of depressions 20 and the epitaxial layer 11 follows the pattern. The substrate may be doped with arsenic and boron; an oxidized Si substrate may be coated with Si from SiCl 4 /H 2 .
GB5865470A 1969-12-29 1970-12-10 Semiconductor devices Expired GB1332464A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88852169A 1969-12-29 1969-12-29

Publications (1)

Publication Number Publication Date
GB1332464A true GB1332464A (en) 1973-10-03

Family

ID=25393325

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5865470A Expired GB1332464A (en) 1969-12-29 1970-12-10 Semiconductor devices

Country Status (4)

Country Link
JP (1) JPS494581B1 (en)
DE (1) DE2061134A1 (en)
FR (1) FR2072083B1 (en)
GB (1) GB1332464A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020135A1 (en) * 1979-05-29 1980-12-10 Massachusetts Institute Of Technology Three-dimensional integration by graphoepitaxy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020135A1 (en) * 1979-05-29 1980-12-10 Massachusetts Institute Of Technology Three-dimensional integration by graphoepitaxy

Also Published As

Publication number Publication date
FR2072083A1 (en) 1971-09-24
FR2072083B1 (en) 1975-01-10
JPS494581B1 (en) 1974-02-01
DE2061134A1 (en) 1971-07-15

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee