GB1323828A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1323828A GB1323828A GB2270371A GB2270371A GB1323828A GB 1323828 A GB1323828 A GB 1323828A GB 2270371 A GB2270371 A GB 2270371A GB 2270371 A GB2270371 A GB 2270371A GB 1323828 A GB1323828 A GB 1323828A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- semi
- zone
- conductor
- passivating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000037237 body shape Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1609470A | 1970-03-03 | 1970-03-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1323828A true GB1323828A (en) | 1973-07-18 |
Family
ID=21775354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2270371A Expired GB1323828A (en) | 1970-03-03 | 1971-04-19 | Semiconductor devices |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5221357B1 (fr) |
| BE (1) | BE763496A (fr) |
| FR (1) | FR2085600B1 (fr) |
| GB (1) | GB1323828A (fr) |
| NL (1) | NL152710B (fr) |
| SE (1) | SE362735B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2511948C1 (ru) * | 2013-02-27 | 2014-04-10 | Общество С Ограниченной Ответственностью "Твинн" | Тепловой диод |
-
1971
- 1971-02-23 SE SE230871A patent/SE362735B/xx unknown
- 1971-02-25 NL NL7102510A patent/NL152710B/xx not_active IP Right Cessation
- 1971-02-26 BE BE763496A patent/BE763496A/fr not_active IP Right Cessation
- 1971-03-01 JP JP1002571A patent/JPS5221357B1/ja active Pending
- 1971-03-02 FR FR7107203A patent/FR2085600B1/fr not_active Expired
- 1971-04-19 GB GB2270371A patent/GB1323828A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2511948C1 (ru) * | 2013-02-27 | 2014-04-10 | Общество С Ограниченной Ответственностью "Твинн" | Тепловой диод |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7102510A (fr) | 1971-09-07 |
| SE362735B (fr) | 1973-12-17 |
| FR2085600B1 (fr) | 1976-06-11 |
| BE763496A (fr) | 1971-07-16 |
| FR2085600A1 (fr) | 1971-12-24 |
| DE2110176A1 (de) | 1971-09-30 |
| NL152710B (nl) | 1977-03-15 |
| JPS5221357B1 (fr) | 1977-06-09 |
| DE2110176B2 (de) | 1976-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |