GB1320998A - Process for preparing a layer of compounds of groups iib and vib - Google Patents

Process for preparing a layer of compounds of groups iib and vib

Info

Publication number
GB1320998A
GB1320998A GB3859071A GB3859071A GB1320998A GB 1320998 A GB1320998 A GB 1320998A GB 3859071 A GB3859071 A GB 3859071A GB 3859071 A GB3859071 A GB 3859071A GB 1320998 A GB1320998 A GB 1320998A
Authority
GB
United Kingdom
Prior art keywords
compounds
layer
vib
groups iib
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3859071A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1320998A publication Critical patent/GB1320998A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Chemical Vapour Deposition (AREA)
GB3859071A 1970-08-17 1971-08-17 Process for preparing a layer of compounds of groups iib and vib Expired GB1320998A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45071391A JPS5118155B1 (enrdf_load_stackoverflow) 1970-08-17 1970-08-17

Publications (1)

Publication Number Publication Date
GB1320998A true GB1320998A (en) 1973-06-20

Family

ID=13459155

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3859071A Expired GB1320998A (en) 1970-08-17 1971-08-17 Process for preparing a layer of compounds of groups iib and vib

Country Status (4)

Country Link
US (1) US3793069A (enrdf_load_stackoverflow)
JP (1) JPS5118155B1 (enrdf_load_stackoverflow)
CA (1) CA950806A (enrdf_load_stackoverflow)
GB (1) GB1320998A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870558A (en) * 1971-08-17 1975-03-11 Tokyo Shibouro Electric Co Ltd Process for preparing a layer of compounds of groups II and VI
BR7507192A (pt) * 1974-11-08 1976-08-10 Western Electric Co Celula fotovoltaica e processo para sua fabricacao
US4046565A (en) * 1975-03-25 1977-09-06 Addressograph Multigraph Corporation Amorphous selenium coating
US4035197A (en) * 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
USRE30412E (en) * 1979-04-26 1980-10-07 Eastman Kodak Company CdTe Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
US5045409A (en) * 1987-11-27 1991-09-03 Atlantic Richfield Company Process for making thin film solar cell
US5030477A (en) * 1988-11-14 1991-07-09 Xerox Corporation Processes for the preparation and processes for suppressing the fractionation of chalcogenide alloys
US5484736A (en) * 1994-09-19 1996-01-16 Midwest Research Institute Process for producing large grain cadmium telluride
CN103962295B (zh) * 2014-04-30 2015-08-19 齐鲁工业大学 一种硫化锌半导体薄膜的简单高效制备方法
WO2021021731A1 (en) * 2019-07-26 2021-02-04 Alliance For Sustainable Energy, Llc Extreme large grain (1 mm) lateral growth of cd(se,te) alloy thin films by reactive anneals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929828B1 (enrdf_load_stackoverflow) * 1968-10-25 1974-08-07

Also Published As

Publication number Publication date
DE2141212A1 (de) 1972-02-24
CA950806A (en) 1974-07-09
DE2141212B2 (de) 1976-11-25
US3793069A (en) 1974-02-19
JPS5118155B1 (enrdf_load_stackoverflow) 1976-06-08

Similar Documents

Publication Publication Date Title
GB1469978A (en) Methods of producing semiconductor devices
GB2163000B (en) Apparatus for forming crystal of semiconductor
GB1320998A (en) Process for preparing a layer of compounds of groups iib and vib
CA932626A (en) Composite method for growth of iib-via compounds on substrates, and process for making composition for the compounds
JPS52140267A (en) Vapor epitaxial crystal growing device
GB1379414A (en) Forming an epitaxial layer on a semiconductor substrate
US3490961A (en) Method of producing silicon body
GB1077116A (en) Improvements in and relating to the production of thin films of cadmium salts
GB1282168A (en) Method of vapour growing ternary epitaxial films
GB1382865A (en) Method of making photoconductive film
ES8607623A1 (es) Un metodo de fabricar un dispositivo semiconductor
GB1087821A (en) A method of making a transistor device and a device so made
US3385656A (en) Method of purifying zinc and cadmium chalcogenides
GB974451A (en) Method for controlling flux pressure during a sintering process
US2954308A (en) Semiconductor impurity diffusion
GB1190992A (en) Improved method of Depositing Semiconductor Material
DE3478125D1 (en) Novel arsenate dopant compounds
JPS5236468A (en) Shallow diffusion method
US3551117A (en) Method for growing single crystals of iib-vib compounds
GB1402998A (en) Apparatus and process for forming p-n junction semiconductor units
GB2008084A (en) Improvements in or relating to the growth of semiconductor compounds
GB1497573A (en) Method for producing an electrophotographic recording material
ES335176A1 (es) Un metodo para producir un elemento semiconductor.
JPS51142275A (en) Method of manufacturing insulating film for semiconductor
JPS522900A (en) Growing method in the vapor phase of group compound iii-v

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee